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長田 貴弘
Address
305-0044 茨城県つくば市並木1-1 [アクセス]
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研究論文 TSV

2019
  1. OGIWARA, Toshiya, NAGATA, Takahiro, YOSHIKAWA, Hideki. English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam. Journal of Surface Analysis. [3] (2019) 209-220 10.1384/jsa
  2. Yoshiyuki Yamashita, Takahiro Nagata, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe. Spectroscopic Observation of the Interface States at the SiO<sub>2</sub>/4H-SiC(0001) Interface. e-Journal of Surface Science and Nanotechnology. 17 [0] (2019) 56-60 10.1380/ejssnt.2019.56
  3. Shinjiro YAGYU, Michiko YOSHITAKE, Toyohiro CHIKYOW, Takahiro NAGATA. 機械学習を用いた光電子収量分光(PYS)の閾値予測の 測定データを用いた検証. Vacuum and Surface Science. 62 [8] (2019) 504-510 10.1380/vss.62.504
  4. Mohamed Barakat Zakaria, Victor Malgras, Takahiro Nagata, Jeonghun Kim, Yoshio Bando, Amanullah Fatehmulla, Abdullah M. Aldhafiri, W. Aslam Farooq, Yohei Jikihara, Tsuruo Nakayama, Yusuke Yamauchi, Jianjian Lin. Gold nanoparticles anchored on mesoporous zirconia thin films for efficient catalytic oxidation of carbon monoxide at low temperatures. Microporous and Mesoporous Materials. 288 (2019) 109530 10.1016/j.micromeso.2019.05.055
  5. Mohamed Barakat Zakaria, Takahiro Nagata, Toyohiro Chikyow. Mesostructured HfO2/Al2O3 Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices. ACS Omega. 4 [12] (2019) 14680-14687 10.1021/acsomega.9b01095
  6. Mohamed B. Zakaria, Alexei A. Belik, Takahiro Nagata, Toshiaki Takei, Satoshi Tominaka, Toyohiro Chikyow. Molecular magnetic thin films made from Ni-Co Prussian blue analogue anchored on silicon wafers. Journal of Magnetism and Magnetic Materials. 486 (2019) 165276 10.1016/j.jmmm.2019.165276
  7. Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Shigenori Ueda, Masataka Imura, Yoshiyuki Yamashita, Toyohiro Chikyow. Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals. Japanese Journal of Applied Physics. 58 [8] (2019) 080903 10.7567/1347-4065/ab2c1e
  8. Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 92 [3] (2019) 3-13 10.1149/09203.0003ecst
  9. Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition. Microelectronic Engineering. 215 (2019) 111013 10.1016/j.mee.2019.111013
  10. Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers. APL Materials. 7 [6] (2019) 061107 10.1063/1.5096626
  11. Kota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow. Effects of substrate self-bias and nitrogen flow rate on non-polar AlN film growth by reactive sputtering. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDG07 10.7567/1347-4065/ab088f
  12. Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Masataka Imura, Shigenori Ueda, Yoshiyuki Yamashita, Toyohiro Chikyow. Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDG06 10.7567/1347-4065/ab0ff0
  13. Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe. Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface. AIP Advances. 9 [4] (2019) 045002 10.1063/1.5088541
  14. Kota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow. Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering. Japanese Journal of Applied Physics. 58 [SB] (2019) SBBK03 10.7567/1347-4065/aafd8e
2018
  1. Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. ECS Transactions. 86 [6] (2018) 31-38 10.1149/08606.0031ecst
  2. Takahiro Nagata, Yoshihisa Suzuki, Yoshiyuki Yamashita, Atsushi Ogura, Toyohiro Chikyow. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis. Japanese Journal of Applied Physics. 57 [4S] (2018) 04FJ04 10.7567/jjap.57.04fj04
  3. Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 123 [9] (2018) 095701 10.1063/1.5016574
  4. 荻原 俊弥, 長田 貴弘, 吉川 英樹. 極低角度入射ビームオージェ深さ方向分析によるHfO<sub>2</sub>/Si基板の分析. JOURNAL OF SURFACE ANALYSIS. 24 [3] (2018) 192-205 10.1384/jsa.24.192
  5. Mohamed Barakat Zakaria, Takahiro Nagata, Asahiko Matsuda, Yudai Yasuhara, Atsushi Ogura, Md. Shahriar A. Hossain, Motasim Billah, Yusuke Yamauchi, Toyohiro Chikyow. Chemical Synthesis of Multilayered Nanostructured Perovskite Thin Films with Dielectric Features for Electric Capacitors. ACS Applied Nano Materials. 1 [2] (2018) 915-921 10.1021/acsanm.7b00310
2017
  1. Xiaoyan Liu, Minoru Osada, Kenji Kitamura, Takahiro Nagata, Donghui Si. Ferroelectric-assisted gold nanoparticles array for centimeter-scale highly reproducible SERS substrates. Scientific Reports. 7 [1] (2017) 10.1038/s41598-017-03301-y
  2. 山下 良之, 蓮沼 隆, 長田 貴弘, 知京 豊祐. オペランド硬X線光電子分光法によるSiO<sub>2</sub>/4H-SiC界面の界面準位のエネルギー分布観測. 表面科学. 38 [7] (2017) 347-350 10.1380/jsssj.38.347
  3. Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow. Effect of Y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis. Japanese Journal of Applied Physics. 56 [6S1] (2017) 06GF11 10.7567/jjap.56.06gf11
  4. Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 121 [9] (2017) 095703 10.1063/1.4977201
  5. Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, Yutaka Wakayama. Photoelectron spectroscopic study on monolayer pentacene thin-film/polar ZnO single-crystal hybrid interface. Applied Physics Express. 10 [2] (2017) 025702 10.7567/apex.10.025702
  6. Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Masataka Imura, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Toyohiro Chikyow. Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals. Applied Physics Express. 10 [1] (2017) 011102 10.7567/apex.10.011102
2016
  1. Kentaro Watanabe, Takahiro Nagata, Seungjun Oh, Yutaka Wakayama, Takashi Sekiguchi, János Volk, Yoshiaki Nakamura. Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods. Nature Communications. 7 [1] (2016) 10.1038/ncomms10609
  2. Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow. Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface. ECS Transactions. 75 [12] (2016) 207-211 10.1149/07512.0207ecst
  3. Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow. Bottom-electrode effect on switching behavior and interface reaction in nanoionic-based resistive changing memory. Japanese Journal of Applied Physics. 55 [8S2] (2016) 08PC03 10.7567/jjap.55.08pc03
  4. Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow. Thin-film growth of (110) rutile TiO2on (100) Ge substrate by pulsed laser deposition. Japanese Journal of Applied Physics. 55 [6S1] (2016) 06GG06 10.7567/jjap.55.06gg06
  5. Takahiro Nagata, Somu Kumaragurubaran, Yoshifumi Tsunekawa, Yoshiyuki Yamashita, Shigenori Ueda, Kenichiro Takahashi, Sung-Gi Ri, Setsu Suzuki, Seungjun Oh, Toyohiro Chikyow. Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor. Japanese Journal of Applied Physics. 55 [6S1] (2016) 06GJ12 10.7567/jjap.55.06gj12
  6. Takahiro Nagata, Toyohiro Chikyow, Kenji Kitamura. Screening charge localization at LiNbO3 surface with Schottky junction. Applied Physics Letters. 108 [17] (2016) 171604 10.1063/1.4947578
  7. Jin Kawakita, Yuki Fujikawa, Takahiro Nagata, Toyohiro Chikyow. Interfacial charge transfer behavior of conducting polymers as contact electrode for semiconductor devices. Japanese Journal of Applied Physics. 55 [4S] (2016) 04EC10 10.7567/jjap.55.04ec10
  8. 室町 英治, 藤田 高弘, 藤田 大介, 村川 健作, 山内 泰, 三石 和貴, 川喜多 磨美子, 岩井 秀夫, 大久保 忠勝, 川喜多 仁, 北澤 英明, 木本 浩司, クスタンセ オスカル, 倉橋 光紀, 後藤 敦, 坂口 勲, 坂田 修身, 櫻井 健次, 張 晗, 篠原 正, 清水 禎, 清水 智子, 志波 光晴, 鈴木 拓, 関口 隆史, 丹所 正孝, 知京 豊裕, 長田 貴弘, 野口 秀典, 端 健二郎, 宝野 和博, 柳生 進二郎, 山下 良之, 吉川 元起, 吉川 英樹, 吉武 道子, 渡邉 賢, 渡邊 誠. 材料イノベーションを加速する先進計測テクノロジーの現状と動向 物質・材料研究のための先進計測テクノロジー. 調査分析室レポートNIMS-RAO-FY2016-3 [ISBN] 978-4-9900563-7-7. 1 (2016) 42-51
  9. 室町 英治, 藤田 高弘, 藤田 大介, 村川 健作, 山内 泰, 三石 和貴, 川喜多 磨美子, 岩井 秀夫, 大久保 忠勝, 川喜多 仁, 北澤 英明, 木本 浩司, クスタンセ オスカル, 倉橋 光紀, 後藤 敦, 坂口 勲, 坂田 修身, 櫻井 健次, 張 晗, 篠原 正, 清水 禎, 清水 智子, 志波 光晴, 鈴木 拓, 関口 隆史, 丹所 正孝, 知京 豊裕, 長田 貴弘, 野口 秀典, 端 健二郎, 宝野 和博, 柳生 進二郎, 山下 良之, 吉川 元起, 吉川 英樹, 渡邉 賢, 渡邊 誠. 材料イノベーションを加速する先進計測テクノロジーの現状と動向. 調査分析室レポート. (2016) 73-89
2015
  1. Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung-Gi Ri, Setsu Suzuki, Toyohiro Chikyow. Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor. Thin Solid Films. 592 (2015) 29-33 10.1016/j.tsf.2015.09.012
  2. Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow. Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition. Thin Solid Films. 591 (2015) 105-110 10.1016/j.tsf.2015.08.031
  3. Klára Ševčíková, Václav Nehasil, Mykhailo Vorokhta, Stanislav Haviar, Vladimír Matolín, Iva Matolínová, Karel Mašek, Igor Píš, Keisuke Kobayashi, Masaaki Kobata, Takahiro Nagata, Yoshitaka Matsushita, Hideki Yoshikawa. Altering properties of cerium oxide thin films by Rh doping. Materials Research Bulletin. 67 (2015) 5-13 10.1016/j.materresbull.2015.02.059
  4. Tatsuru Nakamura, Nam Nguyen, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Keiji Ishibashi, Setsu Suzuki. Heteroepitaxial growth of nonpolar Cu-doped ZnO thin film on MnS-buffered (100) Si substrate. Japanese Journal of Applied Physics. 54 [6S1] (2015) 06FJ10 10.7567/jjap.54.06fj10
  5. Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow. Combinatorial synthesis of BaTiO3–Bi(Mg2/3Nb1/3)O3thin-films for high-temperature capacitors. Japanese Journal of Applied Physics. 54 [6S1] (2015) 06FJ02 10.7567/jjap.54.06fj02
  6. Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow. Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics. 54 [6S1] (2015) 06FG01 10.7567/jjap.54.06fg01
  7. Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow. BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors. Japanese Journal of Applied Physics. 54 [4S] (2015) 04DH02 10.7567/jjap.54.04dh02
  8. Kentaro Watanabe, Takahiro Nagata, Yutaka Wakayama, Takashi Sekiguchi, Róbert Erdélyi, János Volk. Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy. ACS Nano. 9 [3] (2015) 2989-3001 10.1021/nn507159u
2014
  1. P. Petrik, E. Agocs, J. Volk, I. Lukacs, B. Fodor, P. Kozma, T. Lohner, S. Oh, Y. Wakayama, T. Nagata, M. Fried. Resolving lateral and vertical structures by ellipsometry using wavelength range scan. Thin Solid Films. 571 (2014) 579-583 10.1016/j.tsf.2014.02.008
  2. I. A. Vladymyrskyi, M. V. Karpets, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, F. Ganss, G. Beddies, M. Albrecht, I. M. Makogon. Influence of the substrate choice on the L10 phase formation of post-annealed Pt/Fe and Pt/Ag/Fe thin films. Journal of Applied Physics. 116 [4] (2014) 044310 10.1063/1.4891477
  3. Zs. Baji, Z. Lábadi, Gy. Molnár, B. Pécz, K. Vad, Z.E. Horváth, P.J. Szabó, T. Nagata, J. Volk. Highly conductive epitaxial ZnO layers deposited by atomic layer deposition. Thin Solid Films. 562 (2014) 485-489 10.1016/j.tsf.2014.04.047
  4. Ying-Yu Lai, Yu-Hsun Chou, Yu-Sheng Wu, Yu-Pin Lan, Tien-Chang Lu, Shing-Chung Wang. Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa. Applied Physics Express. 7 [6] (2014) 062101 10.7567/apex.7.062101
  5. Takahiro Nagata, Seungjun Oh, Yoshiyuki Yamashita, Hideki Yoshikawa, Norihiro Ikeno, Keisuke Kobayashi, Toyohiro Chikyow, Yutaka Wakayama. Photoelectron spectroscopic study on band alignment of poly(3-hexylthiophene-2,5-diyl)/polar-ZnO heterointerface. Thin Solid Films. 554 (2014) 194-198 10.1016/j.tsf.2013.08.018
2013
  1. I. A. Vladymyrskyi, M. V. Karpets, F. Ganss, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, G. Beddies, M. Albrecht, Iu. M. Makogon. Influence of the annealing atmosphere on the structural properties of FePt thin films. Journal of Applied Physics. 114 [16] (2013) 164314 10.1063/1.4827202
  2. M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi. Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy. Applied Physics Letters. 103 [16] (2013) 162110 10.1063/1.4826094
  3. Takahiro Nagata, Masamitsu Haemori, Toyohiro Chikyow. Combinatorial Synthesis of Cu/(TaxNb1–x)2O5 Stack Structure for Nanoionics-Type ReRAM Device. ACS Combinatorial Science. 15 [8] (2013) 435-438 10.1021/co4000425
  4. Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Hiroyuki Takeda, Meiyong Liao, AnLi Yang, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasuo Koide, Keisuke Kobayashi, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Tsutomu Araki, Yasushi Nanishi. Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy. Journal of Applied Physics. 114 [3] (2013) 033505 10.1063/1.4812570
  5. Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame, Toyohiro Chikyow. Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap. Journal of Applied Physics. 114 [1] (2013) 014106 10.1063/1.4811691
  6. Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi. Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories. Physical Review B. 87 [15] (2013) 10.1103/physrevb.87.155201
  7. Xiaoyan Liu, Kenji Kitamura, Qiuming Yu, Jiajie Xu, Minoru Osada, Nagata Takahiro, Jiangyu Li, Guozhong Cao. Tunable and highly reproducible surface-enhanced Raman scattering substrates made from large-scale nanoparticle arrays based on periodically poled LiNbO3templates. Science and Technology of Advanced Materials. 14 [5] (2013) 055011 10.1088/1468-6996/14/5/055011
  8. Seungjun Oh, Takahiro Nagata, János Volk, Yutaka Wakayama. Improving the performance of inorganic-organic hybrid photovoltaic devices by uniform ordering of ZnO nanorods and near-atmospheric pressure nitrogen plasma treatment. Journal of Applied Physics. 113 [8] (2013) 083708 10.1063/1.4793283
  9. T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama. Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure. Applied Physics Letters. 102 [4] (2013) 043302 10.1063/1.4790298
2012
  1. Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Tsuyoshi Uehara, Masamitsu Haemori, Keisuke Kobayashi, Toyohiro Chikyow. Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface. Journal of Applied Physics. 112 [11] (2012) 116104 10.1063/1.4768908
  2. T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama. Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface. Applied Physics Letters. 101 [17] (2012) 173303 10.1063/1.4762834
  3. Seungjun Oh, Takahiro Nagata, János Volk, Yutaka Wakayama. Nanoimprint for Fabrication of Highly Ordered Epitaxial ZnO Nanorods on Transparent Conductive Oxide Films. Applied Physics Express. 5 [9] (2012) 095003 10.1143/apex.5.095003
  4. Oliver Bierwagen, Takahiro Nagata, Mark E. White, Min-Ying Tsai, James S. Speck. Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface. Journal of Materials Research. 27 [17] (2012) 2232-2236 10.1557/jmr.2012.172
  5. Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano. Development of AlN/diamond heterojunction field effect transistors. Diamond and Related Materials. 24 (2012) 206-209 10.1016/j.diamond.2012.01.020
  6. Michiko Yoshitake, Takahiro Nagata, Weijie Song. Electrical properties and stability of an epitaxial alumina film formed on Cu-9 at. % Al(111). Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30 [2] (2012) 021509 10.1116/1.3688493
  7. Takahiro Nagata, Masamitsu Haemori, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi, Toyohiro Chikyow. Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation. Journal of Materials Research. 27 [06] (2012) 869-878 10.1557/jmr.2011.448
2011
  1. T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow. Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure. Applied Physics Letters. 99 [22] (2011) 223517 10.1063/1.3664781
  2. Petr Blumentrit, Michiko Yoshitake, Slavomír Nemšák, Taeyoung Kim, Takahiro Nagata. XPS and UPS study on band alignment at Pt–Zn-terminated ZnO(0001) interface. Applied Surface Science. 258 [2] (2011) 780-785 10.1016/j.apsusc.2011.08.095
  3. NAGATA, Takahiro, YAMASHITA, Yoshiyuki, KOBAYASHI, Keisuke. Study of Oxygen Migration at Pt/HfO2/Pt Interface by Bias-application Hard X-ray Photoelectron Spectroscopy. SPring-8 Research Frontiers 2010. (2011) 70-71
  4. 山下 良之, 長田 貴弘, 吉川 英樹, 知京 豊祐, 小林 啓介. デバイス動作下硬X線光電子分光法による最先端材料の物性解明. 表面科学. 32 [6] (2011) 320-324 10.1380/jsssj.32.320
  5. T. Nagata, O. Bierwagen, M. E. White, M. Y. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, J. S. Speck. XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films. Applied Physics Letters. 98 [23] (2011) 232107 10.1063/1.3596449
  6. Róbert Erdélyi, Takahiro Nagata, David J. Rogers, Ferechteh H. Teherani, Zsolt E. Horváth, Zoltán Lábadi, Zsófia Baji, Yutaka Wakayama, János Volk. Investigations into the Impact of the Template Layer on ZnO Nanowire Arrays Made Using Low Temperature Wet Chemical Growth. Crystal Growth & Design. 11 [6] (2011) 2515-2519 10.1021/cg2002755
  7. Oliver Bierwagen, James S. Speck, Takahiro Nagata, Toyohiro Chikyow, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi. Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment. Applied Physics Letters. 98 [17] (2011) 172101 10.1063/1.3583446
  8. Takahiro Nagata, Seungjun Oh, Toyohiro Chikyow, Yutaka Wakayama. Effect of UV–ozone treatment on electrical properties of PEDOT:PSS film. Organic Electronics. 12 [2] (2011) 279-284 10.1016/j.orgel.2010.11.009
  9. 長田 貴弘, 知京 豊裕. コンビナトリアル手法を用いたナノエレクトロニクス材料における合金薄膜材料開発. 金属. 81 [1] (2011) 32-37
2010
  1. Taeyoung Kim, Michiko Yoshitake, Shinjiro Yagyu, Slavomir Nemsak, Takahiro Nagata, Toyohiro Chikyow. XPS study on band alignment at PtO-terminated ZnO(0001) interface. Surface and Interface Analysis. 42 [10-11] (2010) 1528-1531 10.1002/sia.3601
  2. T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow. Oxygen migration at Pt/HfO2/Pt interface under bias operation. Applied Physics Letters. 97 [8] (2010) 082902 10.1063/1.3483756
  3. Shojiro Komatsu, Kazuaki Kobayashi, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto. Photoinduced Phase Transformations in Boron Nitride: New Polytypic Forms of sp3-Bonded (6H- and 30H-) BN. The Journal of Physical Chemistry C. 114 [31] (2010) 13176-13186 10.1021/jp1028728
  4. T. Nagata, J. Volk, M. Haemori, Y. Yamashita, H. Yoshikawa, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow. Schottky barrier height behavior of Pt–Ru alloy contacts on single-crystal n-ZnO. Journal of Applied Physics. 107 [10] (2010) 103714 10.1063/1.3427562
  5. Takahiro Nagata, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, James S. Speck. Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films. Journal of Applied Physics. 107 [3] (2010) 033707 10.1063/1.3298467
2009
  1. Shojiro Komatsu, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Kazunori Koga, Atsushi Yamamoto, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto, Masaharu Shiratani. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser–plasma synchronous CVD method. Journal of Physics D: Applied Physics. 42 [22] (2009) 225107 10.1088/0022-3727/42/22/225107
  2. Takahiro Nagata, Gregor Koblmüller, Oliver Bierwagen, Chad S. Gallinat, James S. Speck. Surface structure and chemical states of a-plane and c-plane InN films. Applied Physics Letters. 95 [13] (2009) 132104 10.1063/1.3238286
  3. J. Volk, T. Nagata, R. Erdélyi, I. Bársony, A. L. Tóth, I. E. Lukács, Zs. Czigány, H. Tomimoto, Y. Shingaya, T. Chikyow. Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics. Nanoscale Research Letters. 4 [7] (2009) 699-704 10.1007/s11671-009-9302-1
  4. T. Nagata, J. Volk, Y. Yamashita, H. Yoshikawa, M. Haemori, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow. Interface structure and the chemical states of Pt film on polar-ZnO single crystal. Applied Physics Letters. 94 [22] (2009) 221904 10.1063/1.3149701
  5. Masamitsu Haemori, Takahiro Nagata, Toyohiro Chikyow. Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion. Applied Physics Express. 2 (2009) 061401 10.1143/apex.2.061401
  6. T. Nagata, M. Haemori, T. Chikyow. Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27 [3] (2009) 492-495 10.1116/1.3097847
  7. Takahiro Nagata, Masamitsu Haemori, Junichiro Anzai, Tsuyoshi Uehara, Toyohiro Chikyow. Surface Nitridation ofc-Plane Sapphire Substrate by Near-Atmospheric Nitrogen Plasma. Japanese Journal of Applied Physics. 48 [4] (2009) 040206 10.1143/jjap.48.040206
  8. T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai, T. Uehara. Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth. Journal of Applied Physics. 105 [6] (2009) 066106 10.1063/1.3086715
2008
  1. Takahiro Nagata, Yoshiki Sakuma, Masamitsu Haemori, Kiyomi Nakajima, Reo Kometani, Kazuhiro Kanda, Shinji Matsui, Toyohiro Chikyow. Effect of Annealing on Implanted Ga of Diamond-Like Carbon Thin Films Fabricated by Focused-Ion-Beam Chemical Vapor Deposition. Japanese Journal of Applied Physics. 47 [12] (2008) 9010-9012 10.1143/jjap.47.9010
  2. Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates. Microelectronic Engineering. 85 [7] (2008) 1642-1646 10.1016/j.mee.2008.04.001
  3. J. Volk, A. Håkansson, H. T. Miyazaki, T. Nagata, J. Shimizu, T. Chikyow. Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation. Applied Physics Letters. 92 [18] (2008) 183114 10.1063/1.2924282
  4. Seiichiro Yaginuma, Kenji Itaka, Yuji Matsumoto, Tsuyoshi Ohnishi, Mikk Lippmaa, Takahiro Nagata, Toyohiro Chikyow, Hideomi Koinuma. Composition-spread thin films of pentacene and 6,13-pentacenequinone fabricated by using continuous-wave laser molecular beam epitaxy. Applied Surface Science. 254 [8] (2008) 2336-2341 10.1016/j.apsusc.2007.09.052
2006
  1. 長田 貴弘, 佐久間 芳樹, 関口 隆史, 知京 豊裕. 集束イオンビームCVD法によるGaN立体構造の作製と評価. BULLETIN OF THE JAPAN ELECTRONIC MATERIALS SOCIETY(日本電子材料技術協会会報). 37 (2006) 37-39

会議録 TSV

2012
  1. Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano. Development of AlN/diamond heterojunction field effect transistors. DIAMOND AND RELATED MATERIALS. 2012, 206-209
2010
  1. NAGATA, Takahiro, HAEMORI, Masamitsu, ANZAI Junichiro, UEHARA Tsuyoshi, CHIKYOW, Toyohiro. Nitride film Growth by Near-Atmospheric Nitrogen Plasma-Assisted Chemical Vapor. TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN. 2010, 579-582
2009
  1. Takuma Yo, Hideaki Tanaka, NAGATA, Takahiro, FUKATA, Naoki, CHIKYOW, Toyohiro, Akira Sakai, Jun Yanagisawa. Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009, 06FB03-1-06FB03-4
2007
  1. NAGATA, Takahiro, SAKUMA, Yoshiki, ANZAI Jyunichiro, KUNUGI Syunsuke, UEHARA Tsuyoshi, CHIKYOW, Toyohiro. Low Temperature Growth of GaN film by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition. TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN. 2007, 489-492
2006
  1. NAGATA, Takahiro, PARHAT, AHMET, YoungZu, Yoo, 山田啓作, 筒井謙, 和田恭雄, CHIKYOW, Toyohiro. Schottky Metal Library for ZnO Based UV Photodiode Fabricated by the Combinatorial Ion Beam Assisted Deposition. APPLIED SURFACE SCIENCE. 2006, 2503-2505
  2. PARHAT, AHMET, NAGATA, Takahiro, KUKURUZNYAK, Dmitry, YAGYU, Shinjiro, WAKAYAMA, Yutaka, YOSHITAKE, Michiko, CHIKYOW, Toyohiro. Composition spread metal thin film fabrication technique based on ion beam sputter deposition . APPLIED SURFACE SCIENCE. 2006, 2472-2476
  3. NAGATA, Takahiro, PARHAT, AHMET, YAMAUCHI, Yasushi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Three-Dimensional GaN Nano Structure Fabrication by Focused Ion Beam Chemical Vapor Deposition. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2006, 250-252
2005
  1. NAGATA, Takahiro, PARHAT, AHMET, YAMAUCHI, Yasushi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Position Controlled GaN Nano-Structures Fabrication by Focused Ion Beam Assisted Methods. Proceedings of the 10th International Symposium on Advanced Physical Fields. 2005, 123-125
2004
  1. NAGATA, Takahiro, PARHAT, AHMET, 鯉田崇, 秩父重英, CHIKYOW, Toyohiro. Position Controlled GaN Nano-Structures Fabricated by Low Energy Focused Ion Beam System.. Mat. Res. Soc. Symp. Proc.. 2004, 39-40

口頭発表 TSV

2020
  1. 小林 陸, 生田目 俊秀, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 女屋 崇, 小椋 厚志. Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性. 第81回応用物理学会秋季学術講演会. 2020
  2. 小林 陸, 生田目 俊秀, 栗島 一徳, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志. NBS及びPBSによるアモルファスCarbon-doped In2O3TFTの信頼性特性. 2020年第67回応用物理春季学術講演会. 2020
  3. 女屋 崇, 生田目 俊秀, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, 澤本 直美, A. Khosravi, 長田 貴弘, R. M. Wallace, J. Kim, 小椋 厚志. プラズマ原子層堆積法で300 °C低温形成した強誘電体HfxZr1−xO2薄膜の疲労特性. 第67回応用物理学会春季学術講演会. 2020
  4. KOBAYASHI, Riku, NABATAME, Toshihide, 栗島 一徳, ONAYA, Takashi, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, TSUKAGOSHI, Kazuhito, 小椋 厚志. Comparison of Oxide TFT with C-doped and C-free In2O3 Channels by ALD. MANA INTERNATIONAL SYMPOSIUM 2020/https://www.nims.go.jp/mana/2020/. 2020
  5. 小林 陸, 生田目 俊秀, 栗島 一徳, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志. ALD法で作製したC-doped及びC-free In2O3膜を チャネルとした酸化物TFTの比較. 「電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-」(第25回). 2020
2019
  1. ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, N. Sawamoto, NAGATA, Takahiro, R. M. Wallace, J. Kim, 小椋 厚志. Reliability of Ferroelectric HfxZr1−xO2 Thin Films Using 300°C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition. 50th IEEE Semiconductor Interface Specialists Conference. 2019
  2. NAGATA, Takahiro, Tomohiro Yamaguchi, UEDA, Shigenori, YI, Wei, CHEN, Jun, Takuya Kobayashi, Hirokazu Yokoo, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Photoelectron Spectroscopic Study on Electronic State of Corundum In2O3 Epitaxial Thin Film Grown by Mist-CVD. 32nd International Microprocesses and Nanotechnology Conference. 2019
  3. ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, NAGATA, Takahiro, N. Sawamoto, R. M. Wallace, J. Kim, 小椋 厚志. Comparison of Reliability of Ferroelectric HfxZr1−xO2 Thin Films Fabricated by Several Processes with Plasma-Enhanced and Thermal Atomic Layer Deposition. The 19th Annual Non-Volatile Memory Technology Symposium. 2019
  4. 柳生 進二郎, 吉武 道子, 知京 豊裕, 長田 貴弘. 光電子収量分光(PYS)における閾値の自動判定. 2019年日本表面真空学会学術講演会. 2019
  5. 知京 豊裕, 長田 貴弘, 木野 日織, 柳生 進二郎. マテリアルズインフォマティクスを使った 材料設計とスマート化の試み. 粉体粉末冶金協会 2019年度秋季大会(第124回講演大会). 2019
  6. NAGATA, Takahiro, Kazumichi Tsumura, Kenro Nakamura, Kengo Uchida, KAWAKITA, Jin, CHIKYOW, Toyohiro, Kazuyuki Higashi. Photoelectroscopic Study of Mn Barrier Layer on SiO2 for Si Wafer Bonding Process. The IEEE International 3D Systems Integration Conference 2019. 2019
  7. 井村 将隆, 津田 俊輔, 長田 貴弘, 山下 良之, 吉川 英樹, 小林 啓介, 小出 康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし. InGaNの表面-バルク電子状態評価. 第80回応用物理学会秋季学術講演会. 2019
  8. NAGATA, Takahiro. High-throughput materials development for nano-electronic device materials. International Symposium on Combinatorial Materials Synthesis and Wide Bandgap Semiconductors. 2019
  9. NAGATA, Takahiro, CHIKYOW, Toyohiro, 安藤 陽. Combinatorial Synthesis of Pyrochlore Ferroelectric Thin Film for High-Temperature Operational Thin Film Capacitor. 2019 IEEE ISAF-ICE-EMF-IWPM-PFM Joint Conference. 2019
  10. ONAYA, Takashi, NABATAME, Toshihide, 澤本 直美, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, 小椋 厚志. Ferroelectricity of HfxZr1−xO2 thin films fabricated using plasma-enhanced atomic layer deposition and low temperature annealing process. 21th Conference of “Insulating Films on Semiconductors”. 2019
  11. NAGATA, Takahiro. Development of new high-dielectric constant thin film materials by combinatorial synthesis. International Conference on Optics in Materials, Energy, and Technologies, 2019 (ICOMET-2019). 2019
  12. 栗島 一徳, NABATAME, Toshihide, ONAYA, Takashi, TSUKAGOSHI, Kazuhito, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, 小椋 厚志. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. IEEE EDTM 2019. 2019
  13. 女屋 崇, 生田目 俊秀, 澤本 直美, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋 厚志. 300 °C低温形成したHfxZr1−xO2薄膜の強誘電性. 第66回応用物理学会春季学術講演会. 2019
  14. 立島滉大, 長田 貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕. 反応性スパッタ法を用いたMnS/Si (100)上への無極性AlN薄膜作製条件の検討. 第66回応用物理学会春季学術講演会. 2019
  15. YASUHARA, Yudai, NAGATA, Takahiro, CHIKYOW, Toyohiro, 小椋 厚志. Effects of polarity and pyroelectricity of LiNbO3 on electrical property control of graphene. MANAシンポジウム. 2019
  16. 立島滉大, 長田 貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕. スパッタリング法によるMnSバッファー層を用いた無極性AlN薄膜成長. MANA Symposium. 2019
  17. 小林 陸, 生田目 俊秀, 栗島 一徳, 木津 たきお, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志. 低温度ALD法を用いてAl2O3及びSiO2下地基板へ形成したIn2O3膜の特性. 電子デバイス界面テクノロジー研究会. 2019
  18. 立島滉大, 長田貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕. 反応性スパッタ法を用いたr面サファイア基板上無極性AlN薄膜作製条件の検討. 第23回電子デバイス界面テクノロジー研究会. 2019
2018
  1. YASUHARA, Yudai, NAGATA, Takahiro, CHIKYOW, Toyohiro, 小椋 厚志. Electrical property control of graphene by polarity and pyroelectricity of LiNbO3 . F2Cπ2 2019 JOINT CONFERENCE. 2018
  2. ONAYA, Takashi, NABATAME, Toshihide, SAWAMOTONaomi, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, OGURAAtsushi. Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique. 49th IEEE Semiconductor Interface Specialists Conference. 2018
  3. NAGATA, Takahiro, UEDA, Shigenori, YAMASHITA, Yoshiyuki, MATSUDA, Asahiko, CHIKYOW, Toyohiro. Development of Ge diffusion barrier layer at CeF3/Ge interface by combinatorial method. 10th International Workshop on Combinatorial Materials Science. 2018
  4. TATEJIMA, Kota, NAGATA, Takahiro, 石橋 啓次, 高橋 健一郎, 鈴木 摂, 小椋 厚志, CHIKYOW, Toyohiro. Effect of substrate self-bias and nitrogen flow rate on non-polar AlN film growth by reactive sputtering. 31st International Microprocess and nanotechnology Conference. 2018
  5. NAGATA, Takahiro, Oliver Bierwagen, Zbigniew Galazka, IMURA, Masataka, UEDA, Shigenori, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Photoelectron spectroscopic study on electronic state and surface structure of In2O3 (111) single crystals. 31st International Microprocesses and Nanotechnology Conference. 2018
  6. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, BANAL, Ganipan Ryan, YOSHIKAWA, Hideki, YANGAnli, YAMASHITA, Yoshiyuki, 小林啓介, KOIDE, Yasuo, 山口智広, 金子昌充, 荒木努, 名西やすし. Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy. International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018
  7. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YOSHIKAWA, Hideki, YAMASHITA, Yoshiyuki, 小林啓介, KOIDE, Yasuo, 山口智広, 荒木努, 名西やすし. Surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0&lt;x&lt;1) epilayers by hard X-ray photoelectron spectroscopy. 第37回電子材料シンポジウム. 2018
  8. KURISHIMA, Kazunori, NABATAME, Toshihide, ONAYA, Takashi, TSUKAGOSHI, Kazuhito, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, OGURAAtsushi. Reliability of Al2O3/In-Si-O-C thin-film transistors with an Al2O3 passivation layer under gate-bias stress. AiMES 2018. 2018
  9. ONAYA, Takashi, NABATAME, Toshihide, 澤本直美, 栗島一徳, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, 小椋厚志. Ferroelectricity of HfxZr1-xO2 thin films fabricated using TiN stressor layer and ZrO2 nucleation layer. AiMES 2018. 2018
  10. インダリ エフィ ダウィ, 山下 良之, 長田 貴弘, 上田 茂典, Ryu Hasunuma, Kikuo Yamabe. Effect of Conduction Band Offset on Breakdown Voltage at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy. 79th of JSAP Autumn Meeting 2018. 2018
  11. 女屋 崇, 生田目 俊秀, 澤本直美, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋厚志. ナノZrO2核生成層を用いた強誘電体HfxZr1−xO2薄膜の作製技術. 第79回応用物理学会秋季学術講演会. 2018
  12. 柳生 進二郎, 吉武 道子, 知京 豊裕, 長田 貴弘. 機械学習による光電子収量分光(PYS)閾値の判定 -訓練データによる予測値依存性-. 第79回応用物理学会秋季学術講演会. 2018
  13. 柳生 進二郎, 吉武 道子, 知京 豊裕, 長田 貴弘. 光電子収量分光(PYS)の閾値の自動判定の検討. 第79回応用物理学会秋季学術講演会. 2018
  14. 立島滉大, 長田 貴弘, 高橋健一郎, 鈴木摂, 石橋啓次, 知京豊裕, 小椋厚志. 反応性スパッタ法を用いた無極性AlN薄膜成長における自己電圧効果の検討. 第79回応用物理学会秋季学術講演会. 2018
  15. 安原 雄大, 長田 貴弘, 小椋 厚志, 知京 豊裕. LiNbO3の焦電効果によるグラフェンの電気特性制御の検討. 第79回秋季応用物理学会学術講演会. 2018
  16. 女屋 崇, 生田目 俊秀, 澤本直美, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋厚志. Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application. SSDM2018. 2018
  17. TATEJIMA, Kota, NAGATA, Takahiro, 鈴木摂, 小椋厚志, 高橋健一郎, CHIKYOW, Toyohiro. Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering. Solid State Device and Material. 2018
  18. 荻原 俊弥, 長田 貴弘, 吉川 英樹. 極低角度入射ビームオージェ深さ方向分析法で得られたHfO2薄膜/Si基板構造のオージェデプスプロファイルの解析. 第78回分析化学討論会. 2018
  19. NAGATA, Takahiro, UEDA, Shigenori, MATSUDA, Asahiko, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Photoelectron spectroscopic study of interface structure of CeF3/Ge stack structure. International Conference on Nanoelectronics Strategy. 2018
  20. 井村 将隆, 津田 俊輔, 長田 貴弘, 山下 良之, 吉川 英樹, 小林 啓介, 小出 康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし. Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化. 第65回応用物理学会春季学術講演会. 2018
  21. 安原 雄大, 知京 豊裕, 小椋 厚志, 長田 貴弘. LiNbO3の極性と焦電効果がグラフェンの電気特性に及ぼす影響. 第66回春季応用物理学会学術講演会. 2018
  22. 荻原 俊弥, 長田 貴弘, 吉川 英樹. 極低角度入射ビームオージェ深さ方向分析で得られたHfO2/Si試料のオージェデプスプロファイルの解析. 第50回表面分析研究会. 2018
  23. 立島 滉大, 長田 貴弘, 石橋 啓次, 高橋 健一郎, 鈴木 摂, 小椋厚志, 知京 豊裕. GaNエピタキシャル基板のための反応性スパッタ法を用いたAlNバッファー層作製条件の検討. 第23回電子デバイス界面テクノロジー研究会. 2018
2017
  1. NAGATA, Takahiro, UEDA, Shigenori, YAMASHITA, Yoshiyuki, MATSUDA, Asahiko, CHIKYOW, Toyohiro. Development of fluoride based high-k dielectric thin film for GaN MIS capacitor. 2017 IWDTF. 2017
  2. 長田 貴弘, 石橋 啓次, 高橋 健一郎, 鈴木 摂, 小椋 厚志, 知京 豊裕. GaNテンプレート基板のための反応性スパッタ法を用いたAlNバッファー層作製条件の検討. 電子材料協会第54回秋季講演大会. 2017
  3. YAMASHITA, Yoshiyuki, Ryo Hasunuma, NAGATA, Takahiro, CHIKYOW, Toyohiro. Spectroscopic Observation of Interface States at SiO2/4H-SiC Interface. ECASIA2017. 2017
  4. SUZUKI, Yoshihisa, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, OGURA Atsushi, CHIKYOW, Toyohiro. Study of Sn and Mg Doping Effects on TiO2/Ge Stack Structure by Combinatorial Synthesis. International Conference on Solid State Devices and Materials. 2017
  5. NAGATA, Takahiro, UEDA, Shigenori, MATSUDA, Asahiko, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Study on interface structure of CeF3/Ge stack structure by hard x-ray photoelectron spectroscopy. 7th International Conference on Hard X-Ray Photoelectron Spectro. 2017
  6. 立島 滉大, 長田 貴弘, 石橋 啓次, 高橋 健一郎, 鈴木 摂, 小椋厚志, 知京 豊裕. Si基板上GaN成長のための反応性スパッタ法を用いた AlNバッファー層作製条件の検討. 第78回応用物理学会秋季学術講演会. 2017
  7. NAGATA, Takahiro, SOMU, Kumaragurubaran, SUZUKI, Yoshihisa, TAKAHASHI, Kenichiro, RI, Sunggi, TSUNEKAWA, Yoshifumi, SUZUKI, Setsu, CHIKYOW, Toyohiro. Combinatorial thin film synthesis for developments of new high dielectric constant thin film materials. IUMRS-ICAM 2017. 2017
  8. TATEJIMA, Kota, NAGATA, Takahiro, ISHIBASHI, Keiji, TAKAHASHI, Kenichiro, SUZUKI, Setsu, Atsushi Ogura, CHIKYOW, Toyohiro. Growth condition optimization of epitaxial AlN film deposited by reactive sputtering. STAC-10. 2017
  9. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOIDE, Yasuo, KOBAYASHI, Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Ke Wang, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy. 12th International Conference on Nitride Semiconductors (ICNS12). 2017
  10. GERLACH, Dominic, MATSUDA, Asahiko, NAGATA, Takahiro, UEDA, Shigenori, Regan Wilks, Marcus B&#228;r, CHIKYOW, Toyohiro. Characterization of buried metal/GaN interfaces. 16th International Conference on the Formation of Semiconductor . 2017
  11. CHIKYOW, Toyohiro, NAGATA, Takahiro, ITOH, Satoshi, TERAKURA, Kiyoyuki, ISHIBASHI, Keiji, SUZUKI, Setsu. High Throughput Experimentation and Materials Informatics. Materials Research Society Spring Meeting 2017. 2017
  12. NAGATA, Takahiro, TAKAHASHI, Kenichiro, RI, Sunggi, TSUNEKAWA, Yoshifumi, SUZUKI, Setsu, CHIKYOW, Toyohiro. Combinatorial synthesis of new high-dielectric constant film materials for nanoelectronics. 2017 MRS Spring Meeting & Exhibit. 2017
2016
  1. 長田 貴弘. 水熱合成ZnOナノ構造の物性と応用. 機能性酸化物膜の液相エピタキシャル結晶成長研究会. 2016
  2. 山下 良之, 蓮沼 隆, 長田 貴弘, 知京 豊裕. オペランド光電子分光法によるSiO2/SiC界面準位のエネルギー分布観測. 第36回表面科学学術講演会・第57回真空に関する連合講演会 . 2016
  3. 長田 貴弘. 次世代エレクトロニクス材料のための界面構造解析. 第73回表面技術アカデミック研究会討論会. 2016
  4. NAGATA, Takahiro, NAKAMURA Tatsuru, HAYAKAWA, Ryoma, YOSHIMURA Takesh, OH, Seungjun, HIROSHIBA Nobuy, CHIKYOW, Toyohiro, FUJIMURA Norifum, WAKAYAMA, Yutaka. Crystallographic Polarity Effect of ZnO on Electronic State of Pentacene/ZnO Hetero Structure. MNC 2016. 2016
  5. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOIDE, Yasuo, KOBAYASHI, Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Ke Wang, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy. International Workshop on Nitride Semiconductors 2016 (IWN2016). 2016
  6. NAKAMURA Tatsuru, NAGATA, Takahiro, HAYAKAWA, Ryoma, YOSHIMURA Takeshi, OH, Seungjun, HIROSHIBA Nobuya, FUJIMURA Norifumi, CHIKYOW, Toyohiro, WAKAYAMA, Yutaka. Crystallographic Polarity Effect of ZnO on Thin Film Growth of Pentacene. SSDM2016. 2016
  7. NAGATA, Takahiro, Bierwagen Oliver, Galazka Zbigniew, UEDA, Shigenori, YOSHIKAWA, Hideki, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Surface electronic states of SnO2 single crystals studied by hard x-ray photoelectron spectroscopy. EMRS 2016 Fall Meeting. 2016
  8. 荻原 俊弥, 長田 貴弘, 吉川 英樹. 極低角度入射ビームオージェ深さ方向分析によるHfO2薄膜/Si基板構造の分析. 日本分析化学会第65年会. 2016
  9. NAGATA, Takahiro, SOMU, Kumaragurubaran, TAKAHASHI, Kenichiro, RI, Sunggi, TSUNEKAWA, Yoshifumi, SUZUKI, Setsu, CHIKYOW, Toyohiro. Development of new high-dielectric constant thin film materials for next-generation nanoelectronics. 229th ECS meeting. 2016
  10. CHIKYOW, Toyohiro, NGUYEN, Nam, MATSUDA, Asahiko, YAYAMA, Tomoe, NAGATA, Takahiro, CHO, Yujin, SEKIGUCHI, Takashi, Uesugi Kenjiro, Nunoue Shinya, Fukushima Noboru, Teramoto Takashi, Christian Dussarrat, Kimura Takako. Epitaxial grwoth of GaN on Si with buffers for future devioces. INC12. 2016
  11. 長田 貴弘, 山下 良之, 吉武 道子, 柳生 進二郎, 石橋 啓次, 高橋 健一郎, 李 成奇, 鈴木 摂. マテリアルズインフォマティクスとハイスループット材料合成・計測. 日本セラミックス協会2016年年会. 2016
  12. 長田 貴弘, ビアワーゲン オリバー, グラッツカ ツビグニュ, 上田 茂典, 山下 良之, 知京 豊裕. ワイドバンドギャップ酸化物半導体表面の 硬X線光電子分光による評価. 日本学術振興会産学協力研究166委員会第70回研究会. 2016
2015
  1. 長田 貴弘. 硬X線光電子分光法による酸化物高誘電体ReRAM素子動作時の界面構造解析. 第25回日本MRS年次大会. 2015
  2. 鈴木 良尚, 長田 貴弘, 山下 良之, 生田目 俊秀, 小椋, 知京 豊裕. TiO2/Ge 界面のGe拡散による影響. Materials Research Society of Japan. 2015
  3. NAGATA, Takahiro, UEDA, Shigenori, YAMASHITA, Yoshiyuki, Higashiwaki Masataka, Kuramata Akito, IKENO, Norihiro, SUZUKI, Yoshihisa, CHIKYOW, Toyohiro. Electronic states of β-Ga2O3 single crystals studied by hard x-ray photoelectron spectroscopy. 2015 Materials Research Society Spring Meeting and Exhibit. 2015
  4. NAGATA, Takahiro, SOMU, Kumaragurubaran, TSUNEKAWA, Yoshifumi, YAMASHITA, Yoshiyuki, UEDA, Shigenori, TAKAHASHI, Kenichiro, RI, Sunggi, SUZUKI, Setsu, OH, Seungjun, CHIKYOW, Toyohiro. Interface stability of electrode/Bi-contained relaxor ferroelectric oxide stack struc-ture for high temperature operational capacitor. 28th International Microprocesses and Nanotechnology Conference . 2015
  5. SUZUKI, Yoshihisa, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, NABATAME, Toshihide, 厚志, CHIKYOW, Toyohiro. Thin film growth of (110) RutileTiO2 on (100) Ge Substrate by Pulsed Laser Deposition. 28th International Microprocesses and Nanotechnology Conference. 2015
  6. NAGATA, Takahiro, UEDA, Shigenori, YAMASHITA, Yoshiyuki, Higashiwaki Masataka, Kuramata Akito, IKENO, Norihiro, SUZUKI, Yoshihisa, CHIKYOW, Toyohiro. Photoelectron spectroscopic study of electronic state of β-Ga2O3 single crystal. The 1st International Workshop on Gallium Oxide and Related Mate. 2015
  7. NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, IMURA, Masataka, OH, Seungjun, KOBASHI, Kazuyoshi, CHIKYOW, Toyohiro. Hard X-ray Photoelectron Spectroscopic Study of Bottom Electrode Effect on Interface Reaction in Resistive Changing Memory Structure. 2015 IWDTF. 2015
  8. NAGATA, Takahiro, Bierwagen Oliver , Galazka Zbigniew , IMURA, Masataka, UEDA, Shigenori, YOSHIKAWA, Hideki, CHIKYOW, Toyohiro. Photoelectron spectroscopic study of electronic state of melt-grown bulk In2O3 single crystals. STAC-9&TOEO-9. 2015
  9. KAWAKITA, Jin, FUJIKAWA, Yuki, NAGATA, Takahiro, CHIKYOW, Toyohiro. Interfacial Charge Transfer Behaviour of Conducting Polymers as Contact Electrode for Semiconductor Devices. 2015 International Conference on Solid State Devices and Materia. 2015
  10. CHIKYOW, Toyohiro, NAGATA, Takahiro, YAGYU, Shinjiro, YAMASHITA, Yoshiyuki, YOSHITAKE, Michiko, ISHIBASHI, Keiji, SUZUKI, Setsu. High throughput experimentation and materials screening for materials informatics. 6th Wolrd Materials Reseach Institutes Forum. 2015
  11. NAGATA, Takahiro, WAKAYAMA, Yutaka, KITAMURA, Kenji, CHIKYOW, Toyohiro. Crystallographic polarity effect of oxide on π conjugated system. Workshop MANA-DIPC“Nanostructures and Complex Functional Materi. 2015
  12. 知京 豊裕, 長田 貴弘, 角谷 正友, 鈴木 摂, 石橋 啓次, 高橋 健一郎. GaN on Si の現状と課題. 東京理科大学ジョイントセミナー. 2015
  13. 中村 立, 長田 貴弘, ギュエン ナム, 高橋 健一郎, 李 成奇, 石橋 啓次, 鈴木 摂, 知京 豊裕. Heteroepitaxial growth of nonpolar ZnO/AlN on Si (100) substrate using MnS buffer layer. 第34回 電子材料シンポジウム. 2015
  14. OH, Seungjun, NAGATA, Takahiro, Janos Volk, WAKAYAMA, Yutaka. Uniform ordering of ZnO nanorods and nitrogen plasma treatment for improving ZnO-P3HT hybrid photovoltaic devices performance. Collaborative Conference on 3D and Materials Research. 2015
  15. NAGATA, Takahiro, SOMU, Kumaragurubaran, TAKAHASHI, Kenichiro, Ri Sung-Gi, Suzuki Setsu, Tsunekawa Yoshifumi, CHIKYOW, Toyohiro. Combinatorial synthesis of Bi contained relaxer ferroelectric film for high temperature operational thin film capacitor. The 11th International Nanotechnology Conference on Communic. 2015
  16. 中浦 拓也, 原田 善之, 長田 貴弘, 関口 隆史, 知京 豊裕, 鈴木 摂, 石垣 隆正, 角谷 正友. MOCVD法を用いて成長したNドープZnO膜のアニール効果. 第62回応用物理学会春季学術講演会. 2015
  17. 鈴木 良尚, 長田 貴弘, 山下 良之, パウルサミー チナマトゥ, 生田目 俊秀, 小橋 和義, 小椋厚志, 知京 豊裕. Ge上ルチル型TiO2_High-k層へのYドープ濃度の依存性. ゲートスタック研究会. 2015
  18. 長田 貴弘, 山下 良之, 吉川 英樹, 井村 将隆, オウ セウンジン, 知京 豊裕. 硬X線光電子分光法によるCu/HfO2 -ReRAM素子動作時の界面構造解析. 第20回ゲートスタック研究会 ―材料・プロセス・評価の物理―. 2015
2014
  1. 中村 立, ギュエン ナム, 長田 貴弘, 知京 豊裕, 李 成奇, 高橋 健一郎, 石橋 啓次, 鈴木 摂. Si基板上非極性ZnO薄膜のエピタキシャル成長とそのLED特性. 第51回日本電子材料技術協会秋期講演大会. 2014
  2. SOMU, Kumaragurubaran, NAGATA, Takahiro, Takahashi Kenichiro, Sun-Gi Ri, Tsunekawa Yoshifumi, Suzuki Setsu, CHIKYOW, Toyohiro. Combinatorial synthesis of BaTiO3-Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors. 27th International Microprocesses and Nanotechnology Conference. 2014
  3. NAKAMURA, Tatsuru, NGUYEN, Nam, NAGATA, Takahiro, TAKAHASHI, Kenichiro, RI, Sunggi, ISHIBASHI, Keiji, SUZUKI, Setsu, CHIKYOW, Toyohiro. Heteroepitaxial growth of nonpolar ZnO thin film on Si substrate using MnS buffer layer. 27th International Microprocesses and Nanotechnology Conference. 2014
  4. NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, IMURA, Masataka, OH, Seungjun, KOBASHI, Kazuyoshi, CHIKYOW, Toyohiro. Bias induced Cu ion migration behavior in resistive change memory structure observed by hard x-ray photoelectron spectroscopy. 2014 International Microprocesses and Nanotechnology Conference . 2014
  5. NAGATA, Takahiro, SOMU, Kumaragurubaran, TAKAHASHI, Kenichiro, Ri Sung-Gi, TSUNEKAWA Yoshifumi, SUZUKI Setsu, CHIKYOW, Toyohiro. Combinatorial synthesis of Bi contained relaxer ferroelectric thin films for high temperature operational capacitor. The 8th International Workshop on Combinatorial Materials Scienc. 2014
  6. 知京 豊裕, 長田 貴弘, 鈴木 摂. マテリアルインフォ-マティックスとコンビナトリアル材料合成. 日本金属学会 2014年秋季講演大会. 2014
  7. 長田 貴弘, ビアワーゲン オリバー, ガラッカ ズビニェフ, 上田 茂典, 吉川 英樹, 井村 将隆, 山下 良之, オウ セウンジン, 坂田 修身, 知京 豊裕. 硬X線光電子分光法によるIn2O3単結晶の電子状態評価. 第75回応用物理学会秋季学術講演会. 2014
  8. SOMU, Kumaragurubaran, NAGATA, Takahiro, Takahashi Kenichiro, Ri Sung-Gi, Tsunekawa Yoshifumi, Suzuki Setsu, CHIKYOW, Toyohiro. BaTiO3 Based Relaxor Ferroelectric Epitaxial Thin-films for High-temperature Operational Capacitors. International conference on Solid State Devices and Materials. 2014
  9. KAWAKITA, Jin, FUJIKAWA, Yuki, NAGATA, Takahiro, CHIKYOW, Toyohiro. Charge-Transfer Behavior of Conducting Polymers as Contact Electrode for Semiconductor Devicesharacterization of Multiwalled Carbon Nanotube-Reinforced Hydroxyapatite Composites Consolidated by Spark Plasma Sintering. International Conference on Solid State Devices and Materials. 2014
  10. SOMU, Kumaragurubaran, NAGATA, Takahiro, CHIKYOW, Toyohiro, Takahashi Kenichiro, Ri Sung-Gi, Tsunekawa Yoshifumi, Suzuki Setsu. BaTiO3 Based Relaxor Ferroelectric Epitaxial Thin-films for High-temperature Operational Capacitors. International conference on Solid State Devices and Materials. 2014
  11. OH, Seungjun, NAGATA, Takahiro, Janos Volk, WAKAYAMA, Yutaka. Uniform ordering of ZnO nanorods and nitrogen plasma treatment for improving ZnO-P3HT hybrid photovoltaic devices performance. 2014 MRS Spring Meeting. 2014
  12. 小橋 和義, 長田 貴弘, 生田目 俊秀, 山下 良之, 小椋厚志, 知京 豊裕. ルチル型TiO2 界面層を用いたHfO2/Ge界面構造制御. 第61回応用物理学会春季学術講演会. 2014
  13. 知京 豊裕, 長田 貴弘, 生田目 俊秀, 吉武 道子, 柳生 進二郎, 大毛利 健治. ナノエレクトロニクス分野における国際連携の取り組み. 2014年 第61回応用物理学会春季学術講演会. 2014
  14. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. ナノプローブCL法によるZnOナノロッドの曲げ変形とバンドギャップの歪シフトのその場評価. 2014年春季&lt;第61回&gt;応用物理学会. 2014
  15. 長田 貴弘, 小橋 和義, 生田目 俊秀, 山下 良之, 小椋 厚志, 知京 豊裕. ルチル型TiO2緩衝層を用いたHigh-k/Ge界面構造制御に関する研究. ゲートスタック研究会―材料・プロセス・評価の物理―(第19回). 2014
2013
  1. NAGATA, Takahiro, Bierwagen Oliver, Galazka Zbigniew , UEDA, Shigenori, YOSHIKAWA, Hideki, IMURA, Masataka, OH, Seungjun, YAMASHITA, Yoshiyuki, SAKATA, Osami, CHIKYOW, Toyohiro. Surface electronic states of In2O3 single crystals studied by hard x-ray photoelectron spectroscopy. 2013 Materials Research Society Spring Meeting and Exhibit. 2013
  2. WATANABE, Kentaro, OH, Seungjun, VOLK, Janos, NAGATA, Takahiro, WAKAYAMA, Yutaka, SEKIGUCHI, Takashi. Growth history of ZnO nanorods visualized by cathodoluminescence technique. ACSIN-12/ICSPM21. 2013
  3. ソム クマラグルバラン, 長田 貴弘, 知京 豊裕, 李成奇, 高橋健一郎, 鈴木摂. BaTiO3系酸化物を用いた高誘電体材料の開発と高温デバイスへの応用. 第50回日本電子材料技術協会秋期講演大会. 2013
  4. KOBASHI, Kazuyoshi, NAGATA, Takahiro, NABATAME, Toshihide, YAMASHITA, Yoshiyuki, Atsushi Ogura, CHIKYOW, Toyohiro. Effects of Rutile TiO2 Interlayer on HfO2/Ge MOS Structure. SSDM 2013. 2013
  5. 渡辺 健太郎, オウ セウンジン, フォルク ヤノシュ, 長田 貴弘, 若山 裕, 関口 隆史. 溶液成長ZnOナノロッドの成長異方性と電気特性. 2013年秋季&lt;第74回&gt;応用物理学会. 2013
  6. オウ セウンジン, 長田 貴弘, ヤノス ヴォルク, 若山 裕. Uniform ordering of ZnO nanorods and near-atmospheric pressure nitrogen plasma treatment for improving ZnO-P3HT hybrid photovoltaic devices performance. 2013 JSAP-MRS Joint Symposia. 2013
  7. 井村 将隆, 津田 俊輔, 長田 貴弘, 武田 寛之, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMg-InNのエネルギーバンド分布評価. 第74回応用物理学会秋季学術講演会. 2013
  8. 北村 健二, 長田 貴弘, 長田 実, 劉 暁燕. 強誘電体結晶のポテンシャル. 第26回秋季シンポジウム. 2013
  9. KITAMURA, Kenji, NAGATA, Takahiro, OSADA, Minoru, LIU Xiaoyan. surface potentials of ferroelectric crystals for energy and bioengineering application. ICMAT 2013. 2013
  10. 長田 貴弘, 南風盛 将光, 知京 豊裕. Combinatorial synthesis of Cu/high-k oxide structure for nanoionics type ReRAM device application. 2013 NIMS CONFERENCE. 2013
  11. オウ セウンジン, 長田 貴弘, ヤノス ヴォルク, 若山 裕. Uniform ordering of ZnO nanorods and near-atmospheric pressure nitrogen plasma treatment for improving ZnO-P3HT hybrid photovoltaic devices performance. NIMS Conference 2013. 2013
  12. WATANABE, Kentaro, VOLK, Janos, OH, Seungjun, NAGATA, Takahiro, WAKAYAMA, Yutaka, SEKIGUCHI, Takashi. Growth history of individual ZnO nanorod visualized by cathodoluminescence technique. NIMS Conference 2013. 2013
  13. NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. Photoelectron Spectroscopic Study on High-k Dielectrics Based ReRAM Structure under Bias Operation. 2013 NIMS CONFERENCE . 2013
  14. KOBASHI, Kazuyoshi, NAGATA, Takahiro, NABATAME, Toshihide, YAMASHITA, Yoshiyuki, Atsushi Ogura, CHIKYOW, Toyohiro. Effects of Rutile TiO2 Interlayer formation on HfO2/Ge MOS device. NIMS Conference 2013. 2013
  15. 小橋 和義, 長田 貴弘, 生田目 俊秀, 山下 良之, 小椋 厚志, 知京 豊裕. HfO2/Ge界面へのルチル型TiO2挿入によるGeOx生成の抑制. シリコン材料・デバイス研究会 (SDM). 2013
  16. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. CL法によるZnOナノワイヤの成長機構の評価. 日本顕微鏡学会 第69回学術講演会. 2013
  17. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, CHEN, Jun, NGUYEN, Nam, SEKIGUCHI, Takashi, YAMASHITA, Yoshiyuki, YAGYU, Shinjiro, YOSHITAKE, Michiko, NGUYEN Nam. New materials discovery and their application for future nano electronics. INC9. 2013
  18. NAGATA, Takahiro, HAEMORI, Masamitsu, CHIKYOW, Toyohiro. Combinatorial synthesis of Cu/high-k dielectric oxide stack structure for nanoionics type ReRAM device. 9th International Nanotechnology Conference on Communication and. 2013
  19. 中村立, 長田 貴弘, 早川 竜馬, オウ セウンジン, 廣芝 伸哉, 藤村紀文, 知京 豊裕, 若山 裕. 極性ZnO基板上におけるペンタセン薄膜の成長モード. 第60回応用物理学会春季学術講演会. 2013
  20. 知京 豊裕, 長田 貴弘, 生田目 俊秀, 山下 良之, 関口 隆史, 陳 君, Yongxun Lui, 昌原明植. ナノスケール機能性酸化物の多様性と次世代デバイスへの期待. 第60回応用物理学会春季学術講演会. 2013
  21. オウ セウンジン, 長田 貴弘, ヤノス ヴォルク, 若山 裕. 高度に配向されたZnOナノロッドと大気圧窒素プラズマ表面処理の光電変換デバイスへの影響. 第60回応用物理学会春季学術講演会. 2013
  22. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. 極低温ナノプローブCL法によるZnOナノワイヤの光学・電気特性評価. 2013年春季&lt;第60回&gt;応用物理学会. 2013
  23. 井村 将隆, 津田 俊輔, 長田 貴弘, 武田 寛之, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 山口智広, 金子昌充, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMgドープIn0.70Ga0.30Nの 表面-バルク電子状態評価. 第60回応用物理学会春季学術講演会. 2013
  24. SOMU, Kumaragurubaran, CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, YAGYU, Shinjiro, CHEN, Jun, SEKIGUCHI, Takashi. COMBINATORIAL MATERIALS EXPLORATION FOR THE GATE STACK IN ADVANCED CMOS DEVICES. Second international workshop on advanced functional nanomateria. 2013
2012
  1. NAGATA, Takahiro, OH, Seungjun, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, IKENO, Norihiro, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro, WAKAYAMA, Yutaka. Photoelectron spectroscopic study on band alingment of P3HT/polar-ZnO heterointeraface. 10th International Conference on Nano-Molecular Electronics. 2012
  2. KOBASHI, Kazuyoshi, NAGATA, Takahiro, IKENO, Norihiro, Atsushi Ogura, CHIKYOW, Toyohiro. Direct contact formation of HfO2 on Si Substrate by Interfacial Layer Scavenging Technique with Ta2O5 Cap. The 6th JSPS Silicon Symposium. 2012
  3. CHIKYOW, Toyohiro, OHI, Akihiko, NABATAME, Toshihide, NAGATA, Takahiro, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi, OHMORI, Kenji. COMBINATORIAL MATERIALS EXPLORATION ON HIGH-K GATE OXIDE AND METAL GATE FOR FUTURE CMOS DEVICES. ISAEM-2012 -AMDI-3. 2012
  4. 長田 貴弘, ビエラワゲンオリバー, ホワイトマーク, ツアイミン, 山下 良之, 吉川 英樹, 大橋 直樹, 小林 啓介, 知京 豊裕, ジェームズスペック. 酸化物半導体薄膜表面の電荷蓄積層の評価と制御. 日本セラミックス協会第32回エレクトロセラミックス研究討論会. 2012
  5. NAGATA, Takahiro, HAEMORI, Masamitsu, CHIKYOW, Toyohiro. Combinatorial synthesis of Ta-Nb oxide system for nano-ionics type ReRAM device. 7th International Workshop on Combinatorial Materials Science an. 2012
  6. IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, KOIDE, Yasuo, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, Kaneko Masamitsu, Kaneko Masamitsu, Yamaguchi Tomohiro, Uematsu Nao, Araki Tsutomu, Nanishi Yasushi. Surface and Bulk Electronic Structure of Mg-doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy . International Workshop on Nitride Semiconductors 2012. 2012
  7. 渡辺 健太郎, フォルク ヤノシュ, オウ セウンジン, 長田 貴弘, 若山 裕, 関口 隆史. ナノプローブ・カソードルミネッセンス装置の開発と圧電性ナノ材料の応力印加その場評価への応用. 2012年秋季&lt;第73回&gt;応用物理学会. 2012
  8. NAKAMURA Tatsuru, NAGATA, Takahiro, HAYAKAWA, Ryoma, OH, Seungjun, HIROSHIBA, Nobuya, FUJIMURA Norifumi, CHIKYOW, Toyohiro, WAKAYAMA, Yutaka. Effect of the polarity on the initial state of interface formation in organic semiconductor/ZnO heterostructures. The 7th International Workshop on Zinc Oxide and Related Materia. 2012
  9. NAGATA, Takahiro, OH, Seungjun, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro, WAKAYAMA, Yutaka. Band alignment study on P3HT/ZnO photovoltaic cell structure using hard x-ray photoelectron spectroscopy. The 7th International Workshop on Zinc Oxide and Related Materia. 2012
  10. 井村 将隆, 津田 俊輔, 長田 貴弘, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 金子昌充, 金子昌充, 山口智広, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたInNの表面電子状態評価. 第72回応用応用物理学会学術講演会. 2012
  11. 井村 将隆, 津田 俊輔, 長田 貴弘, 小出 康夫, ヤン アンリ, 山下 良之, 吉川 英樹, 小林 啓介, 金子昌充, 金子昌充, 山口智広, 上松 尚, 荒木努, 名西やすし. 硬X線光電子分光法を用いたMgドープInNの表面およびバルク電子状態評価. 第31回電子材料シンポジウム. 2012
  12. KOBASHI, Kazuyoshi, NAGATA, Takahiro, IKENO, Norihiro, Atsushi Ogura, CHIKYOW, Toyohiro. Direct contact formation of High-k layer to Si by Interfacial Layer Scavenging Technique with Ta2O5 Cap. the 8th International Nanotechnology Conference (INC8). 2012
  13. IKENO, Norihiro, Yuki Tsuchiya, Tomihisa Tachibana, Setsu Suzuki, Keiji Ishibashi, NAGATA, Takahiro, Atsushi Ogura, CHIKYOW, Toyohiro. Impacts of hydrogen radical treatment for SiO2 deposited on silicon by low temperature process. INC8. 2012
  14. 長田 貴弘, 山下 良之, 吉川 英樹, 南風盛 将光, 小林 啓介, 知京 豊裕. ias Application HX-PES Study of Metal/HfO2 structure for Oxide Based ReRAM Application. 8th International Nanotechnology Conference on Communication and. 2012
  15. 吉川 英樹, 山下 良之, 長田 貴弘. 実用デバイスにおける電圧駆動状態でのin-situ硬X線光電子分光. 平成23年度GINO研究領域創成支援プロジェクトワークショップ. 2012
  16. 中村立, 長田 貴弘, 早川 竜馬, オウ セウンジン, 廣芝 伸哉, 藤村紀文, 知京 豊裕, 若山 裕. ZnO極性表面上に成長したペンタセン薄膜の表面電位測定. 第59回応用物理学関係連合講演会. 2012
  17. 吉武 道子, 長田 貴弘, ソン ウェイジェ, 山内 康弘. 極薄エピアルミナ膜/CuAl合金単結晶の大気保持中の安定性. 第59回応用物理学関係連合講演会. 2012
  18. 小橋 和義, 長田 貴弘, 池野 成裕, 小椋 厚志, 知京 豊裕. スカベンジング効果を用いたHfO2/Si界面のSiO2の薄膜化. 第59回応用物理学関係連合講演会. 2012
  19. 長田 貴弘, オウ セウンジン, 山下 良之, 吉川 英樹, 小林 啓介, 知京 豊裕, 若山 裕. 硬X線光電子分光法を用いたP3HT/ZnO界面のバンドアライメント評価. 第59回応用物理学関係連合講演会. 2012
  20. 長田 貴弘, 杉村茂昭, 知京 豊裕. PLD法によるZnO薄膜成長における単結晶ターゲットの効果. 第59回応用物理学関係連合講演会. 2012
  21. オウ セウンジン, 長田 貴弘, Janos Volk, 若山 裕. ナノインプリント法を用いたZnOナノロッドの成長制御と光電変換デバイスへの応用. 応用物理学関係連合講演会. 2012
  22. オウ セウンジン, 長田 貴弘, Janos Volk, 若山 裕. ナノインプリント法により高度に配列されたZnOナノロッド. 分子ナノシステムの創発化学 第3回公開シンポジウム. 2012
2011
  1. YOSHITAKE, Michiko, NAGATA, Takahiro, SONG, Weijie, Yamauchi Yasuhiro. 極薄エピアルミナ膜/CuAl合金単結晶の大気保持中の安定性. 第31回表面科学学術講演会. 2011
  2. 小橋 和義, 長田 貴弘, 岩下 祐太, 池野 成裕, 足立 哲也, 小椋厚志, 知京 豊裕. スカベンジング効果を用いたHfO2/Si界面のSiO2の薄膜化. 日本電子材料技術協会第48回秋期講演大会. 2011
  3. 池野 成裕, 立花 福久, Lee Hyunju, 長田 貴弘, 小橋 和義, 小椋 厚志, 知京 豊裕. コンビナトリアル手法を用いた結晶Si系太陽電池パッシベーションにおける材料探索. The 3rd NIMS(MANA)- Waseda International Symposium. 2011
  4. IKENO, Norihiro, Tachibana Tomihisa, Lee Hyunju, NAGATA, Takahiro, KOBASHI, Kazuyoshi, Yoshida Haruhiko, Arafune Koji, Satoh Shin-ichi, CHIKYOW, Toyohiro, Ogura Atsushi. Combinatorial Synthesis Study of Passivation Layer for Crystalline Si Photovoltaics. DRIP XIV conference. 2011
  5. NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, HAEMORI, Masamitsu, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. BIAS APPLICATION HX-PES STUDY OF METAL/OXIDE INTERFACE: OXIDE BASED RERAM APPLICATION. HAXPES 2011 - 4th International Workshop on Hard X-ray Photoelec. 2011
  6. オウ セウンジン, 長田 貴弘, 知京 豊裕, 若山 裕. ZnO/P3HTハイブリッド光電変換デバイスの界面制御による高効率化の検討. 応用物理学会学術講演会. 2011
  7. 中村立, 長田 貴弘, 早川 竜馬, オウ セウンジン, 廣芝 伸哉, 藤村紀文, 知京 豊裕, 若山 裕. 極性を有するZnO基板上のペンタセン薄膜の成長過程. 応用物理学会学術講演会. 2011
  8. YAMASHITA, Yoshiyuki, NAGATA, Takahiro, YOSHIKAWA, Hideki, CHIKYOW, Toyohiro, KOBAYASHI, Keisuke. Bias-application in Hard X-ray Photoelectron Spectroscopy for Characterization of Advanced Materials. European Conference on Surface Science. 2011
  9. CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. combinatorial materials research and screening for future nano electronics. the 6th CSIRO Advanced Materials Conference & Workshops . 2011
  10. NAGATA, Takahiro, HAEMORI, Masamitsu, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. Study on oxygen and metal migration at Pt or Cu/HfO2 interfaces under bias operation for oxide based ReRAM application. The Seventh International Nanotechnology Conference on Communic. 2011
  11. CHIKYOW, Toyohiro, YOSHITAKE, Michiko, NABATAME, Toshihide, NAGATA, Takahiro, SEKIGUCHI, Takashi. New materials research for future nano electronics in NIMS. The 7th International Nanotechnology Conference. 2011
  12. NAGATA, Takahiro, HAEMORI, Masamitsu, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, IWASHITA, Yuta, CHIKYOW, Toyohiro. Oxygen migration at Pt or Cu/HfO2 interface under bias operation: oxide based ReRAM application. 2011 Materials Research Society Spring Meeting and Exhibit. 2011
  13. 中村 立, 長田 貴弘, 芦田 淳, 吉村 武, 藤村 紀文. Zn 極性及びO 極性ホモエピタキシャルZnO 薄膜の表面構造. 平成23年春季第58回応用物理学関係連合講演会. 2011
  14. 長田 貴弘, フォルク ヤヌシュ, エデリー ロベルト, 呉 承俊, 知京 豊裕, バルソニー イステバン, 若山 裕. 配置制御されたZnOナノロッド成長への基板の影響. 平成23年春季第58回応用物理学関係連合講演会. 2011
  15. KOMATSU, Shojiro, KOBAYASHI, Kazuaki, NAGATA, Takahiro, CHIKYOW, Toyohiro. New semiconducting BN films with sp3-bonded polytypic structures and functional morphologies prepared by laser-plasma synergetic deposition methods. The 2nd International Workshop on Plasma Nano-Interfaces and Pla. 2011
  16. KOMATSU, Shojiro, KOBAYASHI, Kazuaki, NAGATA, Takahiro, CHIKYOW, Toyohiro. New phases of sp3-bonded boron nitride prepared by photo-assisted plasma processing methods: the fundamentals and applications to electronic devices. ICACNM-2011. 2011
  17. KOMATSU, Shojiro, KOBAYASHI, Kazuaki, NAGATA, Takahiro, CHIKYOW, Toyohiro. New semiconducting BN films with sp3-bonded polytypic structures and functional morphologies prepared by laser-plasma synergetic deposition methods. ICNC 2011. 2011
2010
  1. KOMATSU, Shojiro, KOBAYASHI, Kazuaki, NAGATA, Takahiro, CHIKYOW, Toyohiro. Sp3-bonded new phases of BN; their growth by laser-plasma synchronous processing and applications. TENCON2010. 2010
  2. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, NGUYEN, Nam, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. Combinatorial materials design and its application for nano device in future. International Workshop on Materials Discovery by Scale-Bridging . 2010
  3. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Combinatorial approach for selection of new gate stack materials. RUSNANO2010. 2010
  4. KOMATSU, Shojiro, KOBAYASHI, Kazuaki, NAGATA, Takahiro, CHIKYOW, Toyohiro. New Phases of Boron Nitride Grown by Laser-Plasma Synchronous Chemical Vapor Deposition. ICRP-7. 2010
  5. 長田 貴弘, 呉承俊, 若山 裕, 知京 豊裕. UV-オゾンクリーニングのPEDOT:PSS薄膜の電気特性への影響. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  6. 長田 貴弘, 南風盛 将光, 山下 良之, 吉川 英樹, 小林 啓介, 知京 豊裕. 電圧印加硬X線光電子分光法によるReRAM:金属/HfO2界面の電子状態評価. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  7. NAGATA, Takahiro, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, OHASHI, Naoki, CHIKYOW, Toyohiro, James S. Speck. Surface structure and chemical states of semiconducting oxides. Focused workshop on semiconducting oxides. 2010
  8. NAGATA, Takahiro, HAEMORI, Masamitsu, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. Interface structure of Pt-based alloy contact on ZnO single crystal. STAC-4. 2010
  9. CHIKYOW, Toyohiro, NAGATA, Takahiro, CHEN, Jun, SEKIGUCHI, Takashi, YOSHITAKE, Michiko, NABATAME, Toshihide. Strategy for new materials discovery for future nano electronics. International Nanotechnology Conference 6 (INC6). 2010
  10. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi, CHEN, Jun. Landscape of Materials Design for Future Nano Electronics and High-throughput Materials Exploration. 1st Singapore-Japan Workshop on Advances in nanomaterials. 2010
  11. NAGATA, Takahiro, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, James S. Speck. Doping effect on valence band and chemical state of Sb- and In-doped SnO2 (101) thin films. 2010 MRS Spring Meeting. 2010
2009
  1. NAGATA, Takahiro, VOLK, Janos, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, HAEMORI, Masamitsu, HAYAKAWA, Ryoma, YOSHITAKE, Michiko, UEDA, Shigenori, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. Interface structure and chemical states of Pt-based metal contact on polar-ZnO single crystal. 2009 Materials Research Society (MRS) Fall Meeting . 2009
  2. 南風盛 将光, 長田 貴弘, 知京 豊裕. Cu/HfO2/Pt構造のパルス電場スイッチング特性. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  3. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Landscape of Combinatorial Materials Exploration and its application for nano scicence . China NANO 2009. 2009
  4. NAGATA, Takahiro, Oliver Bierwagen, Gregor Koblm&uuml;ller, Chad S. Gallinat, James S. Speck. Surface accumulation layer and structure of non-polar InN films. The 36th International Symposium on Compound Semiconductors. 2009
  5. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi. Landscape of materials design for future nano electronics and high-throughput materials exploration。 . Nano Korea 2009. 2009
  6. NAGATA, Takahiro, VOLK, Janos, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, HAEMORI, Masamitsu, HAYAKAWA, Ryoma, UEDA, Shigenori, KOBAYASHI, Keisuke, CHIKYOW, Toyohiro. Interface structure and chemical states of metal contact on oxide materials. The Fifth Internation Nanotechnology Conference on Communication. 2009
  7. HAEMORI, Masamitsu, NAGATA, Takahiro, CHIKYOW, Toyohiro. RESISTIVE SWITCHING IN Cu/HfO2/Pt STRUCTURE FOR NONVOLATILE MEMORY APPLICATION. 2009 MRS Spring Meeting. 2009
  8. 南風盛 将光, 長田 貴弘, 知京 豊裕. 酸化ハフニウムを固体電解質としたCu/HfO2/Pt構造の抵抗スイッチング特性. 2009年春季 第56回応用物理学関係連合講演会. 2009
2008
  1. NAGATA, Takahiro, HAEMORI, Masamitsu, CHIKYOW, Toyohiro. Composition spread metal thin film fabrication by combinatorial sputtering technique. 5th Int.Conf. on Combinatorial and High-Throughput Mat. Science. 2008
  2. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, ITAKA, Kenji, YOSHITAKE, Michiko, KOINUMA, Hideomi. System to create a combinatorial thin film library. 5Th International Conference on Combinatorial and highThroughput. 2008
  3. NAGATA, Takahiro, HAEMORI, Masamitsu, YAMASHITA, Yoshiyuki, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, YOSHITAKE, Michiko, HAYAKAWA, Ryoma, CHIKYOW, Toyohiro. Schottky barrier height control of Pt-based Binary-alloy on ZnO by Combinatorial Method. 2008 Electronic Materials Conference. 2008
  4. CHIKYOW, Toyohiro, 大毛利健治, NAGATA, Takahiro, UMEZAWA, Naoto, 南風盛将光, YOSHITAKE, Michiko, 長谷川哲也, 鯉沼秀臣, 山田啓作. LANDSCAPE OF COMBINATORIAL MATERIALS EXPLORATION and HIGH THROUGHPUT CHARACTERIZATIONS FOR THE POST-CMOS DEVICES . 2008 VLSI-TSA. 2008
  5. 長田 貴弘, 佐久間 芳樹, 南風盛 将光, 中島 清美, 米谷玲皇, 神田一浩, 松井真二, 知京 豊裕. FIB-CVD法により堆積したDLC薄膜の熱処理による構造変化. 2008年春季 第55回応用物理学関係連合講演会 . 2008
  6. 長田 貴弘, 佐久間 芳樹, 南風盛 将光, 安西純一郎, 上原剛, 知京 豊裕. ダイレクト式大気圧プラズマCVD法によるGaN薄膜の低温成長における水素添加の効果. 2008年春季 第55回応用物理学関係連合講演会 . 2008
  7. HAEMORI, Masamitsu, NAGATA, Takahiro, CHIKYOW, Toyohiro. INVESTIGATION OF INTERLAYER MATERIALS FOR ATOMIC SWITCHING DEVICE BY USING TRANSITION METAL OXIDES . MRS spring meeting 2008. 2008
  8. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, OHMORI, Kenji, WATANABE, Heiji, YAMADA, Keisaku, SHIRAISHI, Kenji, KOINUMA, Hideomi. Landscape of materials design for future nano-electronics and high-throughput materials exploration. JST-DFG Workshop on Nanoelectronics. 2008
2007
  1. 長田 貴弘, 南風盛 将光, 佐久間 芳樹, 安西純一郎, 上原剛, 知京 豊裕. The Hydrogen Effect on GaN film Growth by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition. 第18回日本MRS学術シンポジウム . 2007
  2. NAGATA, Takahiro, VOLK, Janos, YOSHITAKE, Michiko, CHIKYOW, Toyohiro. Pt-based Binary-alloy Schottky Metal Library Fabrication for ZnO by Combinatorial Method. 2007 MRS Fall Meeting. 2007
  3. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, 大毛利健治, 山田啓作, MIKKLIPPMAA, 鯉沼秀臣. Landscape of Combinatorial Materials Exploration and Materials Informatics. MRS Fall Meeting 2007. 2007
  4. 南風盛 将光, 長田 貴弘, 知京 豊裕. 金属酸化物を用いた原子スイッチ中間層材料の検討. 第44回日本電子材料技術協会秋期講演大会. 2007
  5. CHIKYOW, Toyohiro, OHMORI, Kenji, NAGATA, Takahiro, YAGYU, Shinjiro, YOSHITAKE, Michiko, WATANABE, Heiji, YAMADA, Keisaku. Metal glass application as the gate materials for the future ULSI. 第5回NIMS-マックスプランク研究所ワークショップ. 2007
  6. NAGATA, Takahiro, SAKUMA, Yoshiki, Jyunichiroh Anzai, Syunsuke Kunugi, Tsuyoshi Uehara, CHIKYOW, Toyohiro. Low Temperature Growth of GaN film by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition. the 7th International Conference of Nitride Semiconductors. 2007
  7. 長田 貴弘, 佐久間 芳樹, 神田一浩, 米谷玲皇, 松井 真二, 中島 清美, 知京 豊裕. FIB-CVD法によるDLC薄膜におけるアニール効果. JST ナノファクトリ領域全体会議. 2007
  8. 長田 貴弘, フォルク ヤノシュ, 吉武 道子, 知京 豊裕. コンビナトリアル手法によるZnO上のPt系合金Schottky電極の作成. 2007年秋季 第68回応用物理学会学術講演会. 2007
  9. CHIKYOW, Toyohiro, NAGATA, Takahiro, UMEZAWA, Naoto, KUKURUZNYAK, Dmitry, HAEMORI, Masamitsu, YOSHITAKE, Michiko, YAGYU, Shinjiro, NIIKURA, Chisato, KOMATSU, Shojiro, OHMORI, Kenji, YAMADA, Keisaku, YAMABE, Kikuo. Strategy of Materials Science for future Nano Electrnonics. INC3. 2007
  10. 長田 貴弘, 佐久間 芳樹, 安西純一郎, 功刀俊介, 上原剛, 知京 豊裕. ダイレクト式大気圧プラズマCVD法によるGaN薄膜の低温成長. 2007年春季 第54回応用物理学関係連合講演会 . 2007
  11. NAGATA, Takahiro, VOLK, Janos, YOSHITAKE, Michiko, CHIKYOW, Toyohiro. Schottky Metal Library for ZnO Based UV Photodiode Fabricated by Combinatorial Ion Beam Deposition. The 2nd Japan-India Workshop on Optronic Materials and Devices. 2007
  12. NAGATA, Takahiro, SAKUMA, Yoshiki, ANZAI Jyunichiro, KUNUGI Syunsuke, UEHARA Tsuyoshi, CHIKYOW, Toyohiro. Low temperature growth of GaN films by near-atmospheric plasma-assisted chemical vapor deposition. 2nd International Advanced Materials Forum for Young Scientists. 2007
2006
  1. WAKAYAMA, Yutaka, SASAKI, HIROYUKI, HAYAKAWA Ryoma, NAGATA, Takahiro, TAKAMI, Seiichi, CHIKYOW, Toyohiro, KOBAYASHI Kenji. Molecular design, nanostructure growth and electronic properties of pi-pi stacking molecular systems. The 7th international conference on nano-molecular electronics. 2006
  2. 目黒 伸也, 知京 豊裕, 長田 貴弘, 渋谷圭介, 大西剛, リップマー・ミック, 上野和紀, 大友明, 福村知昭, 川崎雅司, 鯉沼 秀臣. 固体材料科学に向けたWebベースのデータ管理システム. 第17回日本MRS学術シンポジウム. 2006
  3. NAGATA, Takahiro, VOLK, Janos, PARHAT, AHMET, YOSHITAKE, Michiko, CHIKYOW, Toyohiro. Combinatorial synthesis of Pt-based Binary-alloy Schottky Contacts on ZnO by a Combinatorial Ion Beam Sputtering. 4th International Workshop on Combinatorial Materials Science an. 2006
  4. MEGURO, Shinya, CHIKYOW, Toyohiro, NAGATA, Takahiro, Shibuya Keisuke, Ohnishi Tsuyoshi, Lippmaa Mikk, KOINUMA, Hideomi. 固体材料科学に向けたWebベースのデータ管理機構. 4th International Workshop on Combinatorial Materials Science. 2006
  5. NAGATA, Takahiro, VOLK, Janos, PARHAT, AHMET, YOSHITAKE, Michiko, CHIKYOW, Toyohiro. Electrical Properties and Interface Structures of Binary-alloy Schottky Contacts on ZnO Fabricated by a Combinatorial Ion Beam S. 2006 Materials Research Society (MRS) Fall Meeting. 2006
  6. 長田 貴弘, 佐久間 芳樹, 安西純一郎, 功刀俊介, 上原剛, 知京 豊裕. 大気圧プラズマCVDによる窒化物薄膜作製. 日本電子材料技術協会第43回秋期講演大会. 2006
  7. 田中 洋則, 小松 正二郎, 風見大介, 長田 貴弘, 守吉 佑介, 岡田 勝行. レーザー支援プラズマCVD法によるsp3-結合性5H-BNミクロコーンエミッターの低温成長. 第67回応用物理学会学術講演会. 2006
  8. 長田 貴弘, 佐久間 芳樹, 安西純一郎, 功刀俊介, 上原剛, 知京 豊裕. ダイレクト式大気圧プラズマCVD法によるGaN薄膜成長. 2006年秋季 第67回応用物理学会学術講演会. 2006
  9. CHIKYOW, Toyohiro, NAGATA, Takahiro, OHMORI, Kenji, UMEZAWA, Naoto, VOLK, Janos, NAKAJIMA, Kiyomi, YAGYU, Shinjiro, YOSHITAKE, Michiko. Combinatorial ternary and binary composition spread thin film deposition and its application for nano scale materials science. 48th IUVSTA Workshop. 2006
  10. CHIKYOW, Toyohiro, NAGATA, Takahiro, OHMORI, Kenji, YAMADA, Keisaku, SHIRAISHI, Kenji, UMEZAWA, Naoto. Combinatorial Nano Interface Control for future Nano Electrnonics. The second international nanotechnology conference. 2006
  11. 長田 貴弘, 上原剛, 佐久間 芳樹, 知京 豊裕. 大気圧プラズマCVD法によるGaN薄膜の低温成長. 2006年春季 第53回応用物理学関係連合講演会. 2006
2005
  1. NAGATA, Takahiro, SAKUMA, Yoshiki, UEHARA Tsuyoshi, CHIKYOW, Toyohiro. GaN Film Growth by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition. 第16回日本MRS学術シンポジウム(国際シンポジウム) . 2005
  2. NAGATA, Takahiro, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Nano rod fabrication of GaN by FIB assisted CVD. 2005 NIST-NIMS Combinatorial Nanomaterials Symposium. 2005
  3. OHMORI, Kenji, PARHAT, AHMET, KUKURUZNYAK, Dmitry, NAGATA, Takahiro, NAKAJIMA, Kiyomi, K. Shiraishi, K. Yamabe, H. Watanabe, K. Yamada, G. Richter, T. Wagner, K. S. Chang, M.L.Greene, CHIKYOW, Toyohiro. Influence of Continuous Workfunction Variation on Electric Properties by Combinatorial Materials Deposition Method. The 36th IEEE Semiconductor Interface Specialists Conference. 2005
  4. OHMORI, Kenji, PARHAT, AHMET, KUKURUZNYAK, Dmitry, NAGATA, Takahiro, NAKAJIMA, Kiyomi, Keisaku Yamada, Kenji Shiraishi, G. Richter, T. Wagner, K.-S. Chang, M. L. Greene, CHIKYOW, Toyohiro. Combinatorial Materials Exploration for Gate Stack Structures of Metal Gate Electrodes and High-κ Dielectric Films. 2005 MRS Fall Meeting. 2005
  5. NAGATA, Takahiro, PARHAT, AHMET, YAMADA Keisaku, TSUTSUI Ken, WADA Yasuo, CHIKYOW, Toyohiro. Crystal Structures and Electrical Properties of Binary-alloy Schottky Contacts on ZnO Fabricated by a Combinatorial Ion Beam Ass. the 2005 MRS Fall Meeting . 2005
  6. 長田 貴弘, 佐久間 芳樹, 関口 隆史, 知京 豊裕. 集束イオンビームCVD法によるGaN立体構造の作製と評価. 日本電子材料技術協会第42回秋期講演大会. 2005
  7. DMITRYKUKURUZNYAK, ParhatAhmet, NAGATA, Takahiro, CHIKYOW, Toyohiro. Advantageous effect of lattice mismatch for heteroepitaxial growth of thin oxide films. 6th Pacific Rim Conference on Ceramics and Glass Technology. 2005
  8. DMITRYKUKURUZNYAK, ParhatAhmet, NAGATA, Takahiro, CHIKYOW, Toyohiro. Screening of composition spread libraries for composition-structure-properties relations using conducting scanning probe and X-r. the 6th Pacific Rim Conference on Ceramics and Glass Technology. 2005
  9. 長田 貴弘, Parhat Ahmet, 山田 啓作, 筒井謙, 和田恭雄, 知京 豊裕. コンビナトリアル手法によるPt-Ru系Schottky電極の作成. 2005年秋季 第66回応用物理学会学術講演会. 2005
  10. 長田 貴弘, 上原剛, 佐久間 芳樹, 知京 豊裕. 大気圧プラズマCVD法によるGaN薄膜の作製. 2005年秋季 第66回応用物理学会学術講演会. 2005
  11. NAGATA, Takahiro, CHIKYOW, Toyohiro. Binary-alloy Schottky contact for ZnO Based UV Photodiode Fabricated by a Combinatorial Ion Beam Assisted Deposition. the Gordon Research Conference on COMBINATORIAL & HIGH THROUGHPU. 2005
  12. CHIKYOW, Toyohiro, PARHAT, AHMET, NAKAJIMA, Kiyomi, KUKURUZNYAK, Dmitry, NAGATA, Takahiro, Gunter Richter, Thomas Wagner. Combinatorial synthesis and characterization. Gordon Research Conference :Combinatorial & High Throughput Mate. 2005
  13. KUKURUZNYAK, Dmitry, PARHAT, AHMET, OHMORI, Kenji, NAGATA, Takahiro, CHIKYOW, Toyohiro. Fast structure mapping of the combinatorial samples by combinatorial XRD system. NIMS-MPI/MF workshop on collaboration in Materials Science. 2005
  14. CHIKYOW, Toyohiro, PARHAT, AHMET, OHMORI, Kenji, NAGATA, Takahiro, NAKAJIMA, Kiyomi, KUKURUZNYAK, Dmitry, Gunther Richter, Thomas Wagner. Ternary metal and oxide thin film synthesis. NIMS-MPI mini Workshop. 2005
  15. NAGATA, Takahiro, PARHAT, AHMET, 筒井謙, 和田恭雄, YAMADA, Keisaku, CHIKYOW, Toyohiro. Combinatorial characterization of Pt-Ru alloys on ZnO for UV detector. NIMS-MPI-MF workshop. 2005
  16. OHMORI, Kenji, PARHAT, AHMET, KUKURUZNYAK, Dmitry, NAGATA, Takahiro, NAKAJIMA, Kiyomi, YAMADA, Keisaku, SHIRAISHI, Kenji, G. Richter, T. Wagner, K.-S. Chang, M. L. Green, CHIKYOW, Toyohiro. Combinatorial Materials Exploration for Gate Stack Structures of Metal Gate Electrodes and High-κ Dielectric Films. NIMS-MPI-MF workshop. 2005
  17. CHIKYOW, Toyohiro, ParhatAhmet, NAKAJIMA, Kiyomi, NAGATA, Takahiro, Gunther Richter, Thomas Wagner. Combinatorial characterizationof metal gate /high-k oxide interface. Electric Materials Conference. 2005
  18. NAGATA, Takahiro, PARHAT, AHMET, 山田啓作, 筒井謙, 和田恭雄, CHIKYOW, Toyohiro. Electrical Characteristics of Pt-Ru Alloys Schottky Contact on ZnO Fabricated by a Combinatorial Method. European Materials Research Society (E-MRS) 2005 Spring Meeting. 2005
  19. 長田 貴弘, 知京 豊裕. 光デバイス用GaN立体構造の作製と評価. 2005年春季 第52回応用物理学関係連合講演会. 2005
  20. 知京 豊裕, Parhat Ahmet, ククルズニアック ドミトリー, 中島 清美, 長田 貴弘. コンビナトリアル手法によるナノ材料開発と電子デバイスへの応用. 強磁場新機能ニュースレーター 第111回講演大会 . 2005
2004
  1. NAKAJIMA, Kiyomi, PARHAT, AHMET, NAGATA, Takahiro, KUKURUZNYAK, Dmitry, KOINUMA, Hideomi, CHIKYOW, Toyohiro. High throughput characterization of thin film interface by tranmission electron microscope. 第3回コンビナトリアル材料科学とその応用に関する日米ワークショッ. 2004
  2. KUKURUZNYAK, Dmitry, PARHAT, AHMET, NAGATA, Takahiro, 山本淳, Fumio Ohuchi, CHIKYOW, Toyohiro. Combinatorial fabrication and characterization of complex transition metal oxides. The Third Japan-US Workshop on Combinatorial Materials Science. 2004
  3. KUKURUZNYAK, Dmitry, PARHAT, AHMET, NAGATA, Takahiro, CHIKYOW, Toyohiro. High-performance gate dielectric compositions in the ternary Y2O3-HfO2-Al2O3 system. 2004 Fall Meeting. 2004
  4. NAGATA, Takahiro, PARHAT, AHMET, YAMAUCHI, Yasushi, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro. Position Controlled GaN Nano-Structures Fabrication by Focused Ion Beam System. 1st International Symposium on the Functionality of Organized Na. 2004
  5. NAGATA, Takahiro, PARHAT, AHMET, YoungZu, Yoo, 山田啓作, 筒井謙, 和田恭雄, CHIKYOW, Toyohiro. SCHOTTKY METAL LIBRARY FABRICATION FOR ZnO BASED UV PHOTODETECTOR BY COMBINATORIAL METHOD. 3rd International Workshop on ZnO and Related Materials. 2004
  6. 長田 貴弘, Parhat Ahmet, 劉 泳祚, 山田啓作, 筒井謙, 和田恭雄, 知京 豊裕. コンビナトリアル手法によるZnO-Schottky 素子の作製. 2004年(平成16年)秋季 第65回応用物理学会学術連合講演会. 2004
  7. CHIKYOW, Toyohiro, YoungZu, Yoo, PARHAT, AHMET, NAGATA, Takahiro, 川崎雅司, 鯉沼秀臣. Epitaxial Growth of ZnO on Si or Al2O3. Zinc Oxide Workshop. 2004
  8. 長田 貴弘, 劉 泳祚, Parhat Ahmet, 宋政桓, 鯉沼秀臣, 知京 豊裕. 単結晶ターゲットを用いたパルスレーザー堆積法によるGaN薄膜の作製. 2004年春季応用物理学関係連合講演会. 2004

特許 TSV

登録特許
  1. 特許第6598013号 プロトン伝導体および燃料電池 (2019)
  2. 特許第6425334号 強誘電体キャパシタおよび電子デバイス (2018)
  3. 特許第6371171号 強誘電体キャパシタおよび電子デバイス (2018)
  4. 特許第6308554号 誘電体薄膜 (2018)
  5. 特許第6146898号 表面増強ラマン分光分析用(SERS)基板、その製造方法、それを用いたバイオセンサおよびそれを用いたマイクロ流路デバイス (2017)
  6. 特許第5218969号 sp3-結合性BN高密度相を有するBN薄膜およびその製造方法。 (2013)
  7. 特許第5044860号 窒化ガリウム等のⅢ族窒化物の成膜方法 (2012)
公開特許出願
  1. No: WO2019/142581 MIS型半導体装置およびその製造方法、並びにその製造に用いるスパッタリングターゲット (2019)
  2. 特開2018190876号 MIS型半導体装置およびその製造方法 (2018)
  3. 特開2018182058号 MIS型半導体装置およびその製造方法 (2018)
  4. 特開2016164901号 ビスマス系誘電体用電極及びキャパシタ (2016)
  5. 特開2009287069号 多元化合物作製装置 (2009)
  6. 特開2008255471号 窒化ガリウム等のIII族窒化物の成膜方法 (2008)
  7. 特開200709281号 窒化ガリウム等のⅢ族窒化物の成膜方法 (2007)
  8. No: WO2007/018121 窒化ガリウム等のⅢ族窒化物の成膜方法 (2007)
  9. 特開WO2007018121号 窒化ガリウム等のIII族窒化物の成膜方法 (2007)
外国特許
  1. No. WO2016063537A1 PROTON CONDUCTOR AND FUEL CELL (2016)
  2. No. US20140002816A1 SUBSTRATE FOR SURFACE ENHANCED RAMAN SPECTROSCOPY ANALYSIS AND MANUFACTURING METHOD OF THE SAME, BIOSENSOR USING THE SAME, AND MICROFLUIDIC DEVICE USING THE SAME (2014)
  3. No. US20090170294A1 METHOD FOR FILM DEPOSITING GROUP III NITRIDE SUCH AS GALLIUM NITRIDE (2009)
  4. No. WO2008111401A1 METHOD OF FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE (2008)
  5. No. CN101233602A Method for forming film of group III nitride such as gallium nitride (2008)
  6. No. EP1916704A1 METHOD FOR FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE (2008)
  7. No. KR2008034022A METHOD FOR FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE (2008)
  8. No. WO2007018121A1 METHOD FOR FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE (2007)

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