- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
研究内容
- Keywords
応用物性・結晶工学
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- 松畑 洋文, 山口 博隆, 関口 隆史, 陳 斌, 佐々木 雅之, 大野 俊之, 鈴木 拓馬, 畠山 哲夫, 辻 崇, 米澤 喜幸, 荒井 和雄. 4H-SiC中の転位組織の放射光トポグラフによる解析. 電気学会論文誌． Ａ. 135 [12] (2015) 768-779 10.1541/ieejfms.135.768
- Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248
- Yaxin Chen, Daiming Tang, Zhiwei Huang, Xi Liu, Jun Chen, Takashi Sekiguchi, Weiye Qu, Junxiao Chen, Dongrun Xu, Yoshio Bando, Xiaolei Hu, Xiaoping Wang, Dmitri Golberg, Xingfu Tang. Stable single atomic silver wires assembling into a circuitry-connectable nanoarray. Nature Communications. 12 [1] (2021) 1191 10.1038/s41467-021-21462-3
書籍
- CHEN, Jun, SEKIGUCHI, Takashi. Electron-Beam-Induced Current. Springer, 2018
- SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. , 2016, 343-373.
- SEKIGUCHI, Takashi. 電子線誘起電流、カソードルミネッセンス. シリコン結晶技術. , 2015, 422-426.
会議録
- YOSHIMURA, Kenichi, CHO, Yujin, LUO, Xianjia, KIMURA, Takashi, SEKIGUCHI, Takashi. Cathodoluminescnece study of pn-junctions in widegap materials using cross sectional polishing. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2017) 1700096-1-1700096-4 10.1002/pssc.201700096
- SEKIGUCHI, Takashi, LEE, Woong, LUO, Xianjia, KIMURA, Takashi, CHO, Yujin. Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2017) 1700054-1-1700054-4 10.1002/pssc.201700054
- Toshihide Agemura, IWAI, Hideo, SEKIGUCHI, Takashi. Development of fountain detectors for spectroscopy of secondary electron in SEM. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2017) 1700057-1-1700057-5 10.1002/pssc.201700057
口頭発表
- YI, Wei, SEKIGUCHI, Takashi, CHEN, Jun. Cathodoluminescence spectral mapping analysis of InGaN/GaN core-shell nanowires . 8th International Symposium on Practical Surface Analysis (PSA19). 2019
- KIMURA, Takashi, YI, Wei, CHEN, Jun, SEKIGUCHI, Takashi. Cathodoluminescence characterization of GaN-based materials: From wafer-scale mapping to nano-scale 3D analysis. 8th International Symposium on Practical Surface Analysis (PSA19). 2019
- CHEN, Jun, YI, Wei, Seiji HIGUCHI, SEKIGUCHI, Takashi. Analysis of Macro Defects in GaN Substrate Wafer based on Imaging Cathodoluminescence Technique . DRIP XVIII. 2019
その他の文献
- MUROMACHI, Eiji, FUJITA, Takahiro, FUJITA, Daisuke, MURAKAWA, Kensaku, YAMAUCHI, Yasushi, MITSUISHI, Kazutaka, KAWAKITA, Mamiko, IWAI, Hideo, OHKUBO, Tadakatsu, KAWAKITA, Jin, KITAZAWA, Hideaki, KIMOTO, Koji, CUSTANCE, Oscar, KURAHASHI, Mitsunori, GOTO, Atsushi, SAKAGUCHI, Isao, SAKATA, Osami, SAKURAI, Kenji, ZHANG, Han, SHINOHARA, Tadashi, SHIMIZU, Tadashi, SHIMIZU, Tomoko, SHIWA, Mitsuharu, SUZUKI, Taku, SEKIGUCHI, Takashi, TANSHO, Masataka, CHIKYOW, Toyohiro, NAGATA, Takahiro, NOGUCHI, Hidenori, HASHI, Kenjiro, HONO, Kazuhiro, YAGYU, Shinjiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Genki, YOSHIKAWA, Hideki, YOSHITAKE, Michiko, WATANABE, Ken, WATANABE, Makoto. 材料イノベーションを加速する先進計測テクノロジーの現状と動向 物質・材料研究のための先進計測テクノロジー. 調査分析室レポートNIMS-RAO-FY2016-3 [ISBN] 978-4-9900563-7-7. 1 (2016) 42-51
- MUROMACHI, Eiji, FUJITA, Takahiro, FUJITA, Daisuke, MURAKAWA, Kensaku, YAMAUCHI, Yasushi, MITSUISHI, Kazutaka, KAWAKITA, Mamiko, IWAI, Hideo, OHKUBO, Tadakatsu, KAWAKITA, Jin, KITAZAWA, Hideaki, KIMOTO, Koji, CUSTANCE, Oscar, KURAHASHI, Mitsunori, GOTO, Atsushi, SAKAGUCHI, Isao, SAKATA, Osami, SAKURAI, Kenji, ZHANG, Han, SHINOHARA, Tadashi, SHIMIZU, Tadashi, SHIMIZU, Tomoko, SHIWA, Mitsuharu, SUZUKI, Taku, SEKIGUCHI, Takashi, TANSHO, Masataka, CHIKYOW, Toyohiro, NAGATA, Takahiro, NOGUCHI, Hidenori, HASHI, Kenjiro, HONO, Kazuhiro, YAGYU, Shinjiro, YAMASHITA, Yoshiyuki, YOSHIKAWA, Genki, YOSHIKAWA, Hideki, WATANABE, Ken, WATANABE, Makoto. 材料イノベーションを加速する先進計測テクノロジーの現状と動向. 調査分析室レポート. (2016) 73-89
- MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi, Satoshi Nakano, Koichi Kakimoto. 50 cm square mono Si ingot growth by seed cast method. Proc on Crystalline Si Solar Cells & Modules. (2014) 159-163
特許
- 特許第5464429号 四角形の断面を有する単結晶シリコンの育成方法 (2014)
- 特許第4863460号 半導体ナノ細線を用いたプローブ及びその製造方法 (2011)
- 特許第6440128号 エネルギー弁別電子検出器及びそれを用いた走査電子顕微鏡 (2018)
- 特開2008053589号 窒化インジウム（ＩｎＮ）あるいは高インジウム組成を有する窒化インジウムガリウム（ＩｎＧａＮ）エピタキシャル薄膜の形成方法 (2008)
- 特開2005274460号 近接場光学顕微鏡及びそれを用いた偏光評価方法 (2005)
- 特開2005215200号 光集積回路の作製方法 (2005)
所属学会
応用物理学会 金属学会 日本電子顕微鏡学会 物理学会