- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- 研究概要
- ワードクラウド
- 人のつながり
研究内容
- Keywords
応用物性・結晶工学
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- 揚村 寿英, SEKIGUCHI, Takashi. Collection efficiency and acceptance maps of electron detectors for understanding signal detection on modern scanning electron microscopy. Microscopy. [1] (2018) 18-29 10.1093/jmicro/dfx124
- Wei Yi, Jun Chen, Takashi Sekiguchi. Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3. Crystals. 10 [9] (2020) 736 10.3390/cryst10090736
- Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi. Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes. Journal of Electronic Materials. 49 [9] (2020) 5196-5204 10.1007/s11664-020-08081-2
書籍
- 知京 豊裕, 吉武 道子, 関口 隆史. 半導体・電子材料界面の構築. 第3版 現代界面コロイド化学の基礎. , 2009, 211-212.
- 関口 隆史. CL, EBIC. 薄膜の評価技術ハンドブック. , 2013, 75-78.
- SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. , 2016, 343-373.
会議録
- SEKIGUCHI, Takashi. Effects of hydrogen on the deep levels in Si, ZnO and Diamond studied by Cathodoluminescence. Material Research Society Symposium Proceedings. 2002, 243-250
- FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation. SOLID STATE PHENOMENA. 2007, 553-558
- Chen Ning Zhang, Tetsuo Uchikoshi, Li Hong Liu, Benjamin Dierre, Yu Jin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Textured Beta-Sialon:Eu<sup>2+</sup> Phosphor Deposits Fabricated by Electrophoretic Deposition (EPD) Process within a Strong Magnetic Field: Preparation Process and Photoluminescence (PL) Properties Depending on Orientation. KEY ENGINEERING MATERIALS. 2015, 268-273
口頭発表
- SEKIGUCHI, Takashi. SEM Cathodoluminescence/EBIC study of widegap semiconductors and devices. Microscopy of Semiconducting Materials (MSM XX). 2017
- 宮村佳児, 原田博文, JIPTNERKarolin, SEKIGUCHI, Takashi, S. Nakano, K. Kakimoto. Improvement of 50cm square mono cast Si for solar cell application. WCPEC-6. 2014
- CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. EBIC and TEM Investigations of Current Leakage Sites in High-k Gate Stacks. MANA International Symposium 2010. 2010
その他の文献
- J. Q. Hu, Y. Bando, J. H. Zhan, Y. B. Li, T. Sekiguchi, HU, Junqing, BANDO, Yoshio, ZHAN, Jinhua, Yubao Li, SEKIGUCHI, Takashi. Two-dimensional micrometer-sized single-crystalline ZnO thin nanosheets. 2003
- A Urbieta, P Fernández, J Piqueras, Ch Hardalov, T Sekiguchi. Cathodoluminescence microscopy of hydrothermal and flux grown ZnO single crystals. 2001
- Takeyoshi Sugaya, Mutsuo Ogura, Yoshinobu Sugiyama, Kazuyuki Matsumoto, Kenji Yonei, Takashi Sekiguchi. Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate. 2001
特許
- 特許第6440128号 エネルギー弁別電子検出器及びそれを用いた走査電子顕微鏡 (2018)
- 特許第4863460号 半導体ナノ細線を用いたプローブ及びその製造方法 (2011)
- 特許第4635184号 酸化亜鉛蛍光体とその製造法及び発光装置 (2010)
所属学会
応用物理学会 金属学会 日本電子顕微鏡学会 物理学会
第二期開発予定
第二期開発予定