- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- 研究概要
- タグクラウド
- 人のつながり
研究内容
- Keywords
応用物性・結晶工学
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- 揚村 寿英, SEKIGUCHI, Takashi. Collection efficiency and acceptance maps of electron detectors for understanding signal detection on modern scanning electron microscopy. Microscopy. [1] (2018) 18-29 10.1093/jmicro/dfx124
- Wei Yi, Jun Uzuhashi, Jun Chen, Takashi Kimura, Satoshi Kamiyama, Tetsuya Takeuchi, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono. Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires. Applied Physics Express. 12 [8] (2019) 085003 10.7567/1882-0786/ab2e37
- Wei Yi, Jun Chen, Seiji Higuchi, Takashi Sekiguchi. Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence. Applied Physics Express. 12 [5] (2019) 051005 10.7567/1882-0786/ab0db8
書籍
- 知京 豊裕, 吉武 道子, 関口 隆史. 半導体・電子材料界面の構築. 第3版 現代界面コロイド化学の基礎. 2009 , 211-212
- 関口 隆史. CL, EBIC. 薄膜の評価技術ハンドブック. 2013 , 75-78
- SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. 2016 , 343-373
会議録
- SEKIGUCHI, Takashi. Effects of hydrogen on the deep levels in Si, ZnO and Diamond studied by Cathodoluminescence. Material Research Society Symposium Proceedings. 2002, 243-250
- FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation. SOLID STATE PHENOMENA. 2007, 553-558
- Chen Ning Zhang, Tetsuo Uchikoshi, Li Hong Liu, Benjamin Dierre, Yu Jin Cho, Yoshio Sakka, Naoto Hirosaki, Takashi Sekiguchi. Textured Beta-Sialon:Eu<sup>2+</sup> Phosphor Deposits Fabricated by Electrophoretic Deposition (EPD) Process within a Strong Magnetic Field: Preparation Process and Photoluminescence (PL) Properties Depending on Orientation. KEY ENGINEERING MATERIALS. 2015, 268-273
口頭発表
- SEKIGUCHI, Takashi. SEM Cathodoluminescence/EBIC study of widegap semiconductors and devices. Microscopy of Semiconducting Materials (MSM XX). 2017
- 宮村佳児, 原田博文, JIPTNERKarolin, SEKIGUCHI, Takashi, S. Nakano, K. Kakimoto. Improvement of 50cm square mono cast Si for solar cell application. WCPEC-6. 2014
- CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. EBIC and TEM Investigations of Current Leakage Sites in High-k Gate Stacks. MANA International Symposium 2010. 2010
特許
- 特許第5077863号 低真空走査型電子顕微鏡を用いた炭素系材料の微細加工方法とその装置 (2012)
- 特許第5294238号 電子素子 (2013)
- 特許第5464429号 四角形の断面を有する単結晶シリコンの育成方法 (2014)
所属学会
応用物理学会 金属学会 日本電子顕微鏡学会 物理学会
第二期開発予定
第二期開発予定