Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface | SAMURAI, NIMS Researchers Directory Service

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Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

Takahiro Nagata, Asahiko Matsuda, Takashi Teramoto, Dominic Gerlach, Peng Shen, Shigenori Ueda, Takako Kimura, Christian Dussarrat, Toyohiro Chikyow.

Journal of Applied Physics 137 [9] 095304. 2025.

https://doi.org/10.1063/5.0224068

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

Created at: 2025-03-19 03:07:08 +0900 Updated at: 2026-10-08 09:09:34 +0900

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