- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
研究内容
- Keywords
ホウ化物、炭化物、表面
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Takashi Aizawa, Shigeru Suehara, Shigeki Otani. Phonon dispersion of a two-dimensional boron sheet on Ag(111). Physical Review Materials. 5 [6] (2021) 10.1103/physrevmaterials.5.064004
- Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takeaki Sakurai, Takao Mori. Improvement of power factor in the room temperature range of Mg2Sn1−x Ge x. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBF06 10.35848/1347-4065/abd9cd
- Takashi Aizawa, Isao Ohkubo, Mariana S. L. Lima, Takeaki Sakurai, Takao Mori. Fabrication of Mg2Sn(111) film by molecular beam epitaxy. Journal of Vacuum Science & Technology A. 37 [6] (2019) 061513 10.1116/1.5122844
会議録
- T Mori, T Aizawa, S Mitani, N Tsujii, I Ohkubo, T Tynell, Y Kakefuda, T Baba, M Mitome, N Kawamoto, D Golberg. Development of thermoelectric thin films and characterization methods. Journal of Physics: Conference Series. 2019, 012055-1-012055-5
- IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. 2017, -
- AIZAWA, Takashi, HISHITA, Shunichi, OTANI, Shigeki. The 2×2 oxidized layer on ZrB2(0001). APPLIED SURFACE SCIENCE. 2009, 1120-1123
口頭発表
- リマ マリアナ, AIZAWA, Takashi, OHKUBO, Isao, 櫻井 岳暁, MORI, Takao. High Power Factor in Mg2Sn1-xGax Epitaxial Thin Films. 2021年 第68回応用物理学会春季学術講演会. 2021
- SUZUKI, Seiya, IWASAKI, Takuya, K. Kanishka H. De Silva, SUEHARA, Shigeru, WATANABE, Kenji, TANIGUCHI, Takashi, 森山 悟士, 吉村 雅満, AIZAWA, Takashi, NAKAYAMA, Tomonobu. Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111). MANA International Symposium 2021 jointly with ICYS. 2021
- 大久保 勇男, 相澤 俊, Mikk Lippmaa, 森 孝雄. TiNの有機金属分子線エピタキシー. 第82回 応⽤物理学会秋季学術講演会. 2021
特許
- 特許第4919401号 素子基板とその製造方法 (2012)
- 特許第5218960号 二ホウ化ジルコニウム（ZrB2）単結晶の育成法及び半導体形成用基板 (2013)
- 特許第1946420号 黒鉛薄膜を有する金属炭化物とその製造法 (1995)