HOME > 論文 > 書誌詳細Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layersTakashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. APL Materials 7 [6] 061107. 2019.https://doi.org/10.1063/1.5096626 Open Access AIP Publishing (Publisher) NIMS著者生田目 俊秀大井 暁彦池田 直樹長田 貴弘Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-07-13 03:00:17 +0900更新時刻: 2024-03-31 01:27:02 +0900
