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Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura.
APL Materials 7 [6] 061107. 2019.
https://doi.org/10.1063/1.5096626
Open Access AIP Publishing (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-07-13 03:00:17 +0900 Updated at: 2026-10-30 05:28:58 +0900

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