HOME > プロフィール > 大井 暁彦
出版物原則として、2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- 大久保 勇男, 大井 暁彦, 相澤 俊, 森 孝雄, 村田正行. 微細化熱電デバイスの開発. クリーンエネルギー. (2022) 15-19
- Isao Ohkubo, Masayuki Murata, Akihiko Ohi, Mariana S. L. Lima, Takeaki Sakurai, Takashi Aizawa, Takao Mori. Structural effects on the performance of microfabricated in-plane
π
-type thermoelectric devices composed of p-type Mg2Sn0.8Ge0.2 and n-type Bi layers. Applied Physics Letters. 122 [24] (2023) 10.1063/5.0151494
- Isao Ohkubo, Masayuki Murata, Mariana S.L. Lima, Takeaki Sakurai, Yuko Sugai, Akihiko Ohi, Takashi Aizawa, Takao Mori. Miniaturized in-plane π-type thermoelectric device composed of a II–IV semiconductor thin film prepared by microfabrication. Materials Today Energy. 28 (2022) 101075 10.1016/j.mtener.2022.101075
会議録
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). (2019) 10.1109/edtm.2019.8731167
- DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki. Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography. Proceedings of CLEO-PR 2015. (2015) 25E3_7-1-25E3_7-2
- NABATAME, Toshihide, KIMURA, Masayuki, YAMADA, Hiroyuki, OHI, Akihiko, CHIKYOW, Toyohiro, Tomoji Ohishi. Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. ECS TRANSACTIONS. (2012) 49-59
口頭発表
- OHKUBO, Isao, 村田 正行, OHI, Akihiko, Mariana S.L. Lima, 櫻井 岳暁, AIZAWA, Takashi, MORI, Takao. Microfabricated in-plane π-type thermoelectric devices based on an epitaxial Mg2Sn0.8Ge0.2 thin film. The 39th Annual International Conference on Thermoelectrics (ICT 2023). 2023
- 大久保 勇男, 村田正行, 大井 暁彦, Mariana S. L. Lima, 櫻井岳暁, 相澤 俊, 森 孝雄. 微細加工技術を用いた薄膜型熱電デバイスの開発. 第70回 応用物理学会 春季学術講演会. 2023
- 澤田 朋実, 生田目 俊秀, 女屋 崇, 井上 万里, 大井 暁彦, 池田 直樹, 塚越 一仁. Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures. 240th ECS Meeting / https://www.electrochem.org/240/. 2021
その他の文献
- 大久保 勇男, 大井 暁彦, 相澤 俊, 森 孝雄, 村田正行. 微細加工技術を用いた平面π型熱電デバイスの開発. 日本熱電学会誌. (2023) 139(11)-139(11)
- DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki. Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography. Proceedings of CLEO-PR 2015. (2015) 25E3_7-1-25E3_7-2
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