HOME > プロフィール > 大井 暁彦
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- 大久保 勇男, 大井 暁彦, 相澤 俊, 森 孝雄, 村田正行. 微細化熱電デバイスの開発. クリーンエネルギー. (2022) 15-19
- Isao Ohkubo, Masayuki Murata, Mariana S.L. Lima, Takeaki Sakurai, Yuko Sugai, Akihiko Ohi, Takashi Aizawa, Takao Mori. Miniaturized in-plane π-type thermoelectric device composed of a II–IV semiconductor thin film prepared by microfabrication. Materials Today Energy. 28 (2022) 101075 10.1016/j.mtener.2022.101075
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide. Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 39 [6] (2021) 062405 10.1116/6.0001334
会議録
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). (2019) 10.1109/edtm.2019.8731167
- DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki. Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography. Proceedings of CLEO-PR 2015. (2015) 25E3_7-1-25E3_7-2
- NABATAME, Toshihide, KIMURA, Masayuki, YAMADA, Hiroyuki, OHI, Akihiko, CHIKYOW, Toyohiro, Tomoji Ohishi. Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. ECS TRANSACTIONS. (2012) 49-59
口頭発表
- 大久保 勇男, 村田正行, 大井 暁彦, Mariana S. L. Lima, 櫻井岳暁, 相澤 俊, 森 孝雄. 微細加工技術を用いた薄膜型熱電デバイスの開発. 第70回 応用物理学会 春季学術講演会. 2023
- 澤田 朋実, 生田目 俊秀, 女屋 崇, 井上 万里, 大井 暁彦, 池田 直樹, 塚越 一仁. Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures. 240th ECS Meeting / https://www.electrochem.org/240/. 2021
- 女屋崇, 生田目俊秀, 澤本直美, 大井暁彦, 池田直樹, 長田貴弘, 小椋厚志. Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor. AVS 21st International Conference on Atomic Layer Deposition (ALD 2021) / https://ald2021.avs.org/. 2021
その他の文献
- DAO, Duy Thang, CHEN, Kai, ISHII, Satoshi, OHI, Akihiko, NABATAME, Toshihide, KITAJIMA, Masahiro, NAGAO, Tadaaki. Aluminum Infrared Plasmonic Perfect Absorbers Fabricated by Colloidal Lithography. Proceedings of CLEO-PR 2015. (2015) 25E3_7-1-25E3_7-2
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