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- 305-0044 茨城県つくば市並木1-1 [アクセス]
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研究内容
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. ECS Transactions. 86 [6] (2018) 31-38 10.1149/08606.0031ecst
- Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura. Improved leakage current properties of ZrO 2 /(Ta/Nb)O x -Al 2 O 3 /ZrO 2 nanolaminate insulating stacks for dynamic random access memory capacitors. Thin Solid Films. 655 (2018) 48-53 10.1016/j.tsf.2018.02.010
- Tomomi Sawada, Toshihide Nabatame, Thang Duy Dao, Ippei Yamamoto, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama, Tomoji Ohishi, Atsushi Ogura, Tadaaki Nagao. Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35 [6] (2017) 061503 10.1116/1.4998425
会議録
- Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. ECS TRANSACTIONS. 2018, 31-38
口頭発表
- KURISHIMA, Kazunori, NABATAME, Toshihide, ONAYA, Takashi, KIZU, Takio, TSUKAGOSHI, Kazuhito, OHI, Akihiko, IKEDA, Naoki, CHIKYOW, Toyohiro, OGURAAtsushi. Influence of Al2O3/In0.76Si0.24O0.99C0.01 interface on reliability for oxide thin film transistor. PCSI-45. 2018
- ONAYA, Takashi, NABATAME, Toshihide, SAWAMOTONaomi, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, OGURAAtsushi. Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application. SSDM2018. 2018
- ONAYA, Takashi, NABATAME, Toshihide, SAWAMOTONaomi, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, OGURAAtsushi. Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique. 49th IEEE Semiconductor Interface Specialists Conference. 2018
第二期開発予定
第二期開発予定