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出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 98 [3] (2020) 63-70 10.1149/09803.0063ecst
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide. Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiO<i><sub>x</sub></i> capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 39 [6] (2021) 062405 10.1116/6.0001334
- Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCM01 10.35848/1347-4065/abe685
会議録
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 2020, 63-70
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita. Study of SiO<sub>2</sub> Interfacial Layer Growth during Fabrication Process of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub>-Based Metal-Ferroelectric Semiconductor. ECS Transactions. 2021, 129-135
- Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 2019, 3-13
口頭発表
- 女屋 崇, 生田目 俊秀, 長田 貴弘, 上田 茂典, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Chang-Yong Nam, Esther H. R. Tsai, 太田 裕之, 森田 行則. 強誘電性の向上へ向けたTiN/HfxZr1−xO2界面のTiOxNy層の重要性. 第27回 電子デバイス界面テクノロジー研究会. 2022
- 澤田 朋実, 生田目 俊秀, 女屋 崇, 井上 万里, 大井 暁彦, 池田 直樹, 塚越 一仁. Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures. 240th ECS Meeting / https://www.electrochem.org/240/. 2021
- 女屋 崇, 生田目 俊秀, 井上 万里, 澤田 朋実, 太田 裕之, 森田 行則. TiN/HfxZr1−xO2/Si-MFS作製におけるSiO2界面層成長の抑制. 第82回応用物理学会秋季学術講演会 / https://meeting.jsap.or.jp/. 2021
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