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出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 98 [3] (2020) 63-70 10.1149/09803.0063ecst
- Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCM01 10.35848/1347-4065/abe685
- Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3. Japanese Journal of Applied Physics. 60 [3] (2021) 030903 10.35848/1347-4065/abde54
会議録
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 2020, 63-70
- Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 2019, 3-13
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). 2019
口頭発表
- ONAYA, Takashi, NABATAME, Toshihide, INOUE, Mari, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本 直美, NAGATA, Takahiro, Jiyoung Kim, 小椋 厚志. Possibility of Above 20-nm-Thick HfxZr1−xO2/ZrO2 and HfxZr1−xO2/HfO2 Bilayers for High Polarization and Breakdown Voltage. 51th IEEE Semiconductor Interface Specialists Conference. 2020
- KOBAYASHI, Riku, NABATAME, Toshihide, ONAYA, Takashi, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, TSUKAGOSHI, Kazuhito, 小椋 厚志. Influence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel. 33rd International Microprocesses and Nanotechnology Conference/https://mnc2020.award-con.com/LOGIN.php. 2020
- ONAYA, Takashi, NABATAME, Toshihide, INOUE, Mari, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, NAGATA, Takahiro, Jiyoung Kim, 小椋 厚志. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−xO2/ZrO2 Bi-layer. Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020). 2020
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