- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- タグクラウド
- 人のつながり
研究内容
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 98 [3] (2020) 63-70 10.1149/09803.0063ecst
- Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 92 [3] (2019) 3-13 10.1149/09203.0003ecst
- Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition. Microelectronic Engineering. 215 (2019) 111013 10.1016/j.mee.2019.111013
会議録
- Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. ECS Transactions. 2020, 63-70
- Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 2019, 3-13
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). 2019
口頭発表
- ONAYA, Takashi, NABATAME, Toshihide, INOUE, Mari, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, NAGATA, Takahiro, Jiyoung Kim, 小椋 厚志. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−xO2/ZrO2 Bi-layer. Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020). 2020
- 小林 陸, 生田目 俊秀, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志. Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性. 第81回応用物理学会秋季学術講演会. 2020
- 女屋 崇, 生田目 俊秀, 井上 万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, 長田 貴弘, Jiyoung Kim, 小椋 厚志. HfxZr1−xO2/ZrO2積層構造による強誘電体厚膜の強誘電性の向上. 第81回応用物理学会秋季学術講演会. 2020
第二期開発予定
第二期開発予定