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出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Yuanzhao Yao, Naoki Ikeda, Takashi Kuroda, Takaaki Mano, Hiromi Koyama, Yoshimasa Sugimoto, Kazuaki Sakoda. Mid-IR Dirac-cone dispersion relation materialized in SOI photonic crystal slabs. Optics Express. 28 [3] (2020) 4194 10.1364/oe.381996
- Yuanzhao Yao, Takashi Kuroda, Naoki Ikeda, Takaaki Mano, Hiromi Koyama, Yoshimasa Sugimoto, Kazuaki Sakoda. Angle-resolved reflection spectra of Dirac cones in triangular-lattice photonic crystal slabs. Optics Express. 28 [15] (2020) 21601 10.1364/oe.397642
- Hai Dang Ngo, Kai Chen, Ørjan S. Handegård, Anh Tung Doan, Thien Duc Ngo, Thang Duy Dao, Naoki Ikeda, Akihiko Ohi, Toshihide Nabatame, Tadaaki Nagao. Nanoantenna Structure with Mid-Infrared Plasmonic Niobium-Doped Titanium Oxide. Micromachines. 11 [1] (2020) 23 10.3390/mi11010023
会議録
- Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. ECS Transactions. 2019, 3-13
- Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress. Electron Devices Technology and Manufacturing Conference (EDTM). 2019
- Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. ECS TRANSACTIONS. 2018, 31-38
口頭発表
- NABATAME, Toshihide, 大石知司, INOUE, Mari, 高橋 誠, 伊藤和博, IKEDA, Naoki, OHI, Akihiko. Characteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperature. PRime2020. 2020
- 小林 陸, 生田目 俊秀, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志. Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性. 第81回応用物理学会秋季学術講演会. 2020
- 前田 瑛里香, 生田目 俊秀, 廣瀨 雅史, 井上 万里, 大井 暁彦, 池田 直樹, 塩崎宏司, 橋詰保, 清野肇. GaNパワーデバイス用HfAlOx、HfSiOx、AlSiOx、Al2O3及びHfO2 絶縁膜の特性比較. 第81回応用物理学会秋季学術講演会. 2020
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