Interface Engineering of MOCVD-Grown MoS2 on Sapphire for High On/Off Ratio FETs

J. Chang, S. Li, H. Maekawa, T. Nishimura, SAKUMA, Yoshiki, NAGATA, Takahiro, K. Nagashio.

The 16th International Conference on Recent Progress in Graphene and 2D Materials Research (RPGR2025). 2025年11月03日-2025年11月07日.

作成時刻: 2025-12-03 03:12:37 +0900 更新時刻: 2025-12-03 03:12:37 +0900