Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3

Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.

ECS Transactions 92 [3] 3-13. 2019.

https://doi.org/10.1149/09203.0003ecst

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作成時刻: 2020-03-27 03:01:41 +0900更新時刻: 2024-04-02 00:50:05 +0900

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