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機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年03月03日

    44件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 112 [1] (2023) 109-117 10.1149/11201.0109ecst
  • Takahiro Nagata, Somu Kumaragurubaran, Kenichiro Takahashi, Sung-Gi Ri, Toyohiro Chikyow. (Invited) Combinatorial Synthesis and Interface Analysis for Development of High Dielectric Constant Thin Films. ECS Transactions. 108 [2] (2022) 61-68 10.1149/10802.0061ecst
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. ECS Transactions. 108 [5] (2022) 79-82 10.1149/10805.0079ecst
  • Ryo Matsumura, Naoki Fukata. Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure. ECS Transactions. 108 [5] (2022) 57-61 10.1149/10805.0057ecst
  • Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide. (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device. ECS Transactions. (2021) 113-120 10.1149/10404.0113ecst
  • Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita. Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor. ECS Transactions. (2021) 129-135 10.1149/10404.0129ecst
  • Tomomi Sawada, Toshihide Nabatame, Takashi Onaya, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi. Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures. ECS Transactions. (2021) 121-128 10.1149/10404.0121ecst
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. (2021) 147-150 10.1149/10202.0147ecst
  • Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. (2021) 141-146 10.1149/10202.0141ecst
  • Rekha Goswami Shrestha, Norifusa Satoh, Jin Kawakita. Enhancement of Sensitivity Through Electrochemical Reaction Between Water and Micro/Nano Galvanic Arrays Towards Dew Condensation Prediction. ECS Transactions. 98 [11] (2020) 35-47 10.1149/09811.0035ecst
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