- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
研究内容
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide. Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiO<i><sub>x</sub></i> capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 39 [6] (2021) 062405 10.1116/6.0001334
- Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60 [6] (2021) 068003 10.35848/1347-4065/ac0260
書籍
- Nobuyuki Matsuki, Yoshitaka Nakano, Yoshihiro Irokawa, Mickael Lozach, Masatomo Sumiy. Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells. SOLAR CELLS − NEW ASPECTS AND SOLUTIONS. InTech, 2011, 307-324. 10.5772/20976
- 色川 芳宏, T. Morikawa, K. Aoki, S. Kosaka, T. Ohwaki, Y. Taga. 光化学反応解析と中間生成物について. 会報 光触媒. , 2006, 21-28.
会議録
- Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. 2019, 109-117
- Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide. (Invited) Study of HfO<sub>2</sub>-Based High-k Gate Insulators for GaN Power Device. ECS Transactions. 2021, 113-120
- IROKAWA, Yoshihiro. Characterization of the metal-semiconductor interface of Pt-GaN diode hydrogen sensors. MATERIALS SCIENCE FORUM. 2013, 473-476
口頭発表
- 生田目 俊秀, 前田 瑛里香, 井上 万里, 廣瀨 雅史, Ryota Ochi, 澤田 朋実, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, 塚越 一仁, 小出 康夫. Study of HfO2-based High-k gate insulators for GaN power device. 240th ECS Meeting / https://www.electrochem.org/240/. 2021
- 生田目 俊秀, 前田 瑛里香, 井上 万里, 廣瀨 雅史, Ryota Ochi, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫. Investigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device. AWAD2021. 2021
- 生田目 俊秀, 前田 瑛里香, 井上 万里, Ryota Och, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫. Study of HfSiOx film as gate insulator for GaN power device. 20th International Workshop on Junction Technology 2021. 2021
その他の文献
- 大脇健史, 森川健志, 青木恒勇, 小坂悟, 色川 芳宏, 多賀康訓. 可視光応答型光触媒表面におけるVOCガスの光化学反応. 表面科学. 28 [10] (2007) 586-592
特許
- 特許第6099085号 窒化物半導体素子の製造方法 (2017)
- 特許第5294238号 電子素子 (2013)
- 特許第5541664号 ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2014)
- 特開2009054814号 電子素子 (2009)
- 特開2011082353号 ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2011)
- 特開2014143292号 密封型窒化物半導体素子及びその製造方法 (2014)