- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
研究内容
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. (2019) 109-117 10.1149/09204.0109ecs
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
- Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide. Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics. ECS Journal of Solid State Science and Technology. 11 [8] (2022) 085010 10.1149/2162-8777/ac8a70
書籍
- Nobuyuki Matsuki, Yoshitaka Nakano, Yoshihiro Irokawa, Mickael Lozach, Masatomo Sumiy. Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells. SOLAR CELLS － NEW ASPECTS AND SOLUTIONS. InTech, 2011, 307-324. 10.5772/20976
- IROKAWA, Yoshihiro, T. Morikawa, K. Aoki, S. Kosaka, T. Ohwaki, Y. Taga. 光化学反応解析と中間生成物について. 会報 光触媒. , 2006, 21-28.
会議録
- IROKAWA, Yoshihiro. Characterization of the metal-semiconductor interface of Pt-GaN diode hydrogen sensors. MATERIALS SCIENCE FORUM. (2013) 473-476
- IROKAWA, Yoshihiro. Hydrogen sensors based on GaN diodes: The sensing mechanism. Proceedings of IEEE SENSORS 2012 . (2012) 9999-1-9999-4
- Yoshitaka Nakano, MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Electrical characterization of n-GaN epilayers using transparent polyaniline Schottky contacts. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2010) 2007-2009
口頭発表
- 澤田 朋実, 生田目 俊秀, 高橋 誠, 伊藤 和博, 女屋 崇, 色川 芳宏, 小出 康夫, 塚越 一仁. GaN(0001)基板上でのアモルファスGa2O3膜の熱処理による高配向結晶成長. 第28回 電子デバイス界面テクノロジー研究会. 2023
- SAWADA, Tomomi, NABATAME, Toshihide, Makoto Takahashi, Kazuhiro Ito, ONAYA, Takashi, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Structural change of Ga2O3 film on GaN(0001) substrate by atomic layer deposition and post-deposition annealing. MNC2022, 35th International Microprocesses and Nanotechnology Conference. 2022
- NABATAME, Toshihide, SAWADA, Tomomi, Makoto Takahashi, Kazuhiro Ito, ONAYA, Takashi, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Growth of Ga2O3 films on Si and GaN substrates by atomic layer deposition and post-deposition annealing. Visual-JW 2022 & DEJI2MA-2. 2022
その他の文献
- TAKEGUCHI, Masaki, OKUNO, Hanako, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron Holography Observation of AlInGaN/GaN Heterointerfaces. Proceedings of The 9th Asia-Pacific Conference on Electron Microscopy. (2009) 255-256
- TAKEGUCHI, Masaki, OKUNO, Hanako, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Electron holography observation of AlGaN/GaN and AlInGaN/GaN heterointerfaces. the Activity Report of the JSPS 141st Committee. (2008) 1-3
- OKUNO, Hanako, TAKEGUCHI, Masaki, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF-STEM. The activity Report of the JS`S 141st Commitee. (2007) TuP-19- TuP-19
特許
- 特許第7162833号 半導体装置の製造方法 (2022)
- 特許第7185225号 半導体装置および半導体装置の製造方法 (2022)
- 特許第5294238号 電子素子 (2013)
- 特開2009054814号 電子素子 (2009)
- 特開2011082353号 ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2011)
- 特開2014143292号 密封型窒化物半導体素子及びその製造方法 (2014)