- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- 研究概要
- タグクラウド
- 人のつながり
研究内容
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- IROKAWA, Yoshihiro, MITSUISHI, Kazutaka, NABATAME, Toshihide, KIMOTO, Koji, KOIDE, Yasuo. Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS. 57 [11] (2018)
- Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography. RSC Advances. 10 [4] (2020) 1878-1882 10.1039/c9ra08882b
- Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide. Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors. Japanese Journal of Applied Physics. 58 [10] (2019) 100915 10.7567/1347-4065/ab476a
書籍
- Nobuyuki Matsuki, Yoshitaka Nakano, Yoshihiro Irokawa, Mickael Lozach, Masatomo Sumiy. Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells. SOLAR CELLS − NEW ASPECTS AND SOLUTIONS. InTech 2011 , 307-324 10.5772/20976
- 色川 芳宏, T. Morikawa, K. Aoki, S. Kosaka, T. Ohwaki, Y. Taga. 光化学反応解析と中間生成物について. 会報 光触媒. 2006 , 21-28
会議録
- Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. 2019, 109-117
- TAKEGUCHI, Masaki, OKUNO, Hanako, MITSUISHI, Kazutaka, IROKAWA, Yoshihiro, SAKUMA, Yoshiki, FURUYA, Kazuo. HAADF-STEM and electron holography observations of AlInGaN/GaN heterostructures. AMTC Letters. 2008, 66-67
- Yoshitaka Nakano, Keiji Nakamura, Yoshihiro Irokawa, Masaki Takeguchi. Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 2009, 9999-9999
口頭発表
- 松木 伸行, 色川 芳宏, 角谷 正友. 透明導電性高分子と窒化物薄膜の接合による太陽電池の開発. 第1回窒化物半導体結晶成長講演会. 2009
- YUGE, Kazuya, NABATAME, Toshihide, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, Akira Uedono, SANG, Liwen, KOIDE, Yasuo, Tomoji Ohishi. Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement. Solid State Devices and Materials. 2018
- IROKAWA, Yoshihiro. Native Oxides on GaN(0001) and Crystalline Intermediate Layers in Oxides/GaN(0001). The 2019 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (2019 IWDTF). 2019
特許
- 特許第6099085号 窒化物半導体素子の製造方法 (2017)
- 特許第5294238号 電子素子 (2013)
- 特許第5541664号 ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2014)
第二期開発予定
第二期開発予定