(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
(Study of HfO2-based High-k gate Insulators for GaN Power Device)
著者 | Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide. |
---|---|
掲載誌名 | ECS Transactions 113-120 |
出版社 | The Electrochemical Society |
発表年 | 2021 |
言語 | English |
DOI | https://doi.org/10.1149/10404.0113ecst |
この文献をMendeleyにインポート | ![]() |