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(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
(Study of HfO2-based High-k gate Insulators for GaN Power Device)

著者Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide.
掲載誌名ECS Transactions 113-120
出版社The Electrochemical Society
発表年2021
言語English
DOIhttps://doi.org/10.1149/10404.0113ecst
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