(Invited) Study of HfO<sub>2</sub>-Based High-k Gate Insulators for GaN Power Device | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
(Study of HfO2-based High-k gate Insulators for GaN Power Device)

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide.

ECS Transactions 113-120. 2021.

https://doi.org/10.1149/10404.0113ecst

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作成時刻: 2022-11-15 00:41:34 +0900更新時刻: 2024-04-02 03:42:18 +0900

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