SAMURAI - NIMS Researchers Database

HOME > 論文 > 書誌詳細

(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
(Study of HfO2-based High-k gate Insulators for GaN Power Device)

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide.
ECS Transactions 113-120. 2021.
https://doi.org/10.1149/10404.0113ecst

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

    作成時刻: 2022-11-15 00:41:34 +0900 更新時刻: 2025-04-19 05:36:15 +0900

    ▲ページトップへ移動