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(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
(Study of HfO2-based High-k gate Insulators for GaN Power Device)

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide.
ECS Transactions 113-120. 2021.
https://doi.org/10.1149/10404.0113ecst

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    Created at: 2022-11-15 00:41:34 +0900Updated at: 2024-04-02 03:42:18 +0900

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