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Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor
(Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−xO2-Based Metal-Ferroelectric-Semiconductor)

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita.
ECS Transactions 129-135. 2021.

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    作成時刻 :2022-11-15 00:41:34 +0900 更新時刻 :2022-11-15 00:41:34 +0900

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