Study of SiO<sub>2</sub> Interfacial Layer Growth during Fabrication Process of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub>-Based Metal-Ferroelectric Semiconductor | SAMURAI, NIMS Researchers Directory Service

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Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor
(Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−xO2-Based Metal-Ferroelectric-Semiconductor)

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita.

ECS Transactions 129-135. 2021.

https://doi.org/10.1149/10404.0129ecst

NIMS author(s)

NABATAME, Toshihide

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-11-15 00:41:34 +0900Updated at: 2024-04-02 03:50:12 +0900

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