(Invited) Role of Oxidant Gas for Atomic Layer Deposition of Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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(Invited) Role of Oxidant Gas for Atomic Layer Deposition of Hf_xZr_1−XO₂ Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors

Takashi Onaya, Koji Kita.

ECS Transactions 113 [2] 51-59. 2024.

https://doi.org/10.1149/11302.0051ecst

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2024-05-30 03:37:59 +0900更新時刻: 2024-10-04 04:32:02 +0900

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