Importance of Annealing Step on Dielectric Constant of ZrO<sub>2</sub> Layer of MIM Capacitors with Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> and ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stack Structures | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures

Tomomi Sawada, Toshihide Nabatame, Takashi Onaya, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi.

ECS Transactions 121-128. 2021.

https://doi.org/10.1149/10404.0121ecst

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作成時刻: 2022-11-15 00:41:34 +0900更新時刻: 2024-04-02 03:43:12 +0900

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