HOME > Article > DetailEpitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor ApplicationsRahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. ECS Transactions 147-150. 2021.https://doi.org/10.1149/10202.0147ecst NIMS author(s)MATSUMURA, RyoFUKATA, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-11-15 00:41:32 +0900 Updated at: 2026-09-07 05:14:12 +0900
