HOME > 論文 > 書誌詳細Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor ApplicationsRahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. ECS Transactions 147-150. 2021.https://doi.org/10.1149/10202.0147ecst NIMS著者松村 亮深田 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-11-15 00:41:32 +0900 更新時刻: 2026-01-28 05:15:23 +0900
