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Comparison of characteristics of thin-film transistor with In<sub>2</sub>O<sub>3</sub> and carbon-doped In<sub>2</sub>O<sub>3</sub> channels by atomic layer deposition and post-metallization annealing in O<sub>3</sub>

著者Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.
掲載誌名Japanese Journal of Applied Physics 60 [3] 030903
ISSN: 13474065, 00214922
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2021
言語English
DOIhttps://doi.org/10.35848/1347-4065/abde54
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