Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3

著者	Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.
掲載誌名	Japanese Journal of Applied Physics 60 [3] 030903 ISSN: 13474065, 00214922 ESIでのカテゴリ: PHYSICS
出版社	IOP Publishing
発表年	2021
言語	English
DOI	https://doi.org/10.35848/1347-4065/abde54
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