Comparison of characteristics of thin-film transistor with In<sub>2</sub>O<sub>3</sub> and carbon-doped In<sub>2</sub>O<sub>3</sub> channels by atomic layer deposition and post-metallization annealing in O<sub>3</sub> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Comparison of characteristics of thin-film transistor with In₂O₃ and carbon-doped In₂O₃ channels by atomic layer deposition and post-metallization annealing in O₃

Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.

Japanese Journal of Applied Physics 60 [3] 030903. 2021.

https://doi.org/10.35848/1347-4065/abde54

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作成時刻: 2021-02-18 03:00:17 +0900 更新時刻: 2025-04-20 04:44:59 +0900

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