Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3
著者 | Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. |
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掲載誌名 | Japanese Journal of Applied Physics 60 [3] 030903 ISSN: 13474065, 00214922 ESIでのカテゴリ: PHYSICS |
出版社 | IOP Publishing |
発表年 | 2021 |
言語 | English |
DOI | https://doi.org/10.35848/1347-4065/abde54 |
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