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Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3

Author(s)Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.
Journal titleJapanese Journal of Applied Physics 60 [3] 030903
ISSN: 13474065, 00214922
ESI category: PHYSICS
PublisherIOP Publishing
Year of publication2021
LanguageEnglish
DOIhttps://doi.org/10.35848/1347-4065/abde54
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