HOME > Article > DetailComparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Japanese Journal of Applied Physics 60 [3] 030903. 2021.https://doi.org/10.35848/1347-4065/abde54 NIMS author(s)NABATAME, ToshihideOHI, AkihikoIKEDA, NaokiNAGATA, TakahiroTSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-02-18 03:00:17 +0900Updated at: 2024-04-02 04:47:33 +0900