| 778件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Kazunori Komori, Shunichi Arisawa, Minoru Tachiki, Shuuichi Ooi, Tadayuki Hayashi, Kazuhiro Endo. Preparation of a high-T
c superconducting magnetic flux transformer with a 100 mm bore coil and static magnetic field transfer at 77 K.. Japanese Journal of Applied Physics. (2021) 10.35848/1347-4065/ac0406 | |
| Ryo Matsumoto, Satoshi Nakano, Sayaka Yamamoto, Yoshihiko Takano. Synthesis and electrical transport measurement of superconducting hydrides using diamond anvil cell with boron-doped diamond electrodes. Japanese Journal of Applied Physics. 60 [9] (2021) 090902 10.35848/1347-4065/ac1a49 | |
| Akihiro Yamashita, Takahiro Nagata, Shinjiro Yagyu, Toru Asahi, Toyohiro Chikyow. Accelerating two-dimensional X-ray diffraction measurement and analysis with density-based clustering for thin films. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG04 10.35848/1347-4065/abf2d8 | |
| Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow. Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG03 10.35848/1347-4065/abf07f | |
| Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata. Effects of Zn
x
Mn1−x
S buffer layer on nonpolar AlN growth on Si (100) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG02 10.35848/1347-4065/abf07a | |
| Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBD03 10.35848/1347-4065/abd538 | |
| Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano. Impact of high-temperature implantation of Mg ions into GaN. Japanese Journal of Applied Physics. 59 [5] (2020) 056502 10.35848/1347-4065/ab8b3d | |
| Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCD25 10.7567/1347-4065/ab106c | |
| Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates. Japanese Journal of Applied Physics. 58 [SC] (2019) SCCB24 10.7567/1347-4065/ab1250 | |
| Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60 [6] (2021) 068003 10.35848/1347-4065/ac0260 | |
