| 1031件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Kenta Ogawa, Toyohiro Chikyow, Naomi Sawamoto, Atsushi Ogura, Takahiro Nagata. Effects of interface formation process on tunneling current components of n-type Ti
0.3
Zn
0.7
O
1.3
/p-type Si stack structure. Japanese Journal of Applied Physics. 65 [6] (2026) 06SP31 10.35848/1347-4065/ae4fcf Open Access | |
| Hayato Yonemoto, Rui Ochiai, Soh Komatsu, Masashi Akabori, Shinjiro Hara. Substrate materials dependence of magnetic domain formation in CoFe nanolayer electrode patterns. Japanese Journal of Applied Physics. 65 [6] (2026) 06SP02 10.35848/1347-4065/ae4635 Open Access | |
| Maki Nishimura, Wataru Namiki, Daiki Nishioka, Sota Hikasa, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya. High-accuracy prediction for the NARMA task achieved by eight detectors in nonlinearly interfered spin waves-based physical reservoir computing. Japanese Journal of Applied Physics. 65 [5] (2026) 05SP05 10.35848/1347-4065/ae43f6 Open Access | |
| Takayoshi Oshima. Mapping primary crystallographic planes in
β
-Ga
2
O
3
based on a pseudo-cubic oxygen sublattice. Japanese Journal of Applied Physics. 65 [3] (2026) 038003 10.35848/1347-4065/ae42ac Open Access | |
| Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Jiro Nishinaga, Masataka Imura, Keigo Urasaki, Tadaaki Isobe. GaN radiation detectors with low-gain avalanche diode structure. Japanese Journal of Applied Physics. 65 [1] (2026) 016501 10.35848/1347-4065/ae2dad | |
| Masato Oda, Tsuyoshi Miyazaki. Stabilities and electronic states of Mg layers in the polarity inversion layer at GaN(0001) interfaces. Japanese Journal of Applied Physics. 65 [1] (2026) 011001 10.35848/1347-4065/ae2a87 | |
| T. Sato, Y. Cao, M. Imai, J.-M. Mouesca, T. Suemasu, S. Gambarelli. Defects in BaSi
2
by EPR, PL and DFT. Japanese Journal of Applied Physics. 64 [12] (2025) 120802 10.35848/1347-4065/ae23d8 | |
| Jun-ichi Inoue. The influence of anisotropic magnetic field fluctuations on the accuracy of static magnetic field measurements using spin-1 defect quantum sensors. Japanese Journal of Applied Physics. 64 [12] (2025) 125001 10.35848/1347-4065/ae2175 | |
| Masashi Suezawa, Naoki Fukata, Ichiro Yonenaga. Thermal equilibrium vacancies in Si crystals doped with atoms of Group III, IV, and V: determination of formation energies and entropies by a slow quenching method and their analyses. Japanese Journal of Applied Physics. 64 [12] (2025) 125502 10.35848/1347-4065/ae1c85 | |
| Daiki Nishioka, Kaoru Shibata, Wataru Namiki, Kazuya Terabe, Takashi Tsuchiya. Physical masking-induced enhancement of information processing capacity in a redox-type ion-gating reservoir. Japanese Journal of Applied Physics. 64 [11] (2025) 11SP25 10.35848/1347-4065/ae1d84 Open Access | |
