研究内容
出版物原則として、2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Yuichi Oshima, Takayoshi Oshima. Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy. Semiconductor Science and Technology. 38 [10] (2023) 105003 10.1088/1361-6641/acf241
- Yuichi Oshima, Takayoshi Oshima. Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3. Japanese Journal of Applied Physics. 62 [8] (2023) 080901 10.35848/1347-4065/acee3b
- Takayoshi Oshima, Yuichi Oshima. Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate. Applied Physics Express. 16 [6] (2023) 066501 10.35848/1882-0786/acdbb7
口頭発表
- 高根 倫史, OSHIMA, Takayoshi, 田中 勝久, 金子 健太郎. Selective area growth of r-SnO2 on r-TiO2 (110) substrate. Compound Semiconductor Week 2023. 2023
- TAKANE, Hitoshi, OSHIMA, Takayoshi, TANAKA, Katsuhisa, KANEKO, Kentaro. Selective area growth of r-SnO2 on r-TiO2 (110) substrate. Compound Semiconductor Week 2023. 2023
- OSHIMA, Takayoshi, OSHIMA, Yuichi. HCl gas etching of (010) and (001) β-Ga2O3 substrates for the fabrication of plasma-damage-free trenches and fins. Compound Semiconductor Week 2023. 2023