SAMURAI - NIMS Researchers Database

HOME > プロフィール > 大島 孝仁

大島 孝仁

大島 孝仁 (OSHIMA, Takayoshi) 0000-0001-8550-9735

TEL
029-860-4573
Address
305-0044 茨城県つくば市並木1-1 [アクセス]
Web Site

[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]

論文 TSV

2026
  1. Takayoshi Oshima, Yuichi Oshima. HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3. Science and Technology of Advanced Materials. 27 [1] (2026) 2680969 10.1080/14686996.2026.2680969 Open Access
  2. Takayoshi Oshima. Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH). Science and Technology of Advanced Materials. 27 [1] (2026) 2666988 10.1080/14686996.2026.2666988 Open Access
  3. Takayoshi Oshima. Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga 2 O 3 via TMAH wet etching. Science and Technology of Advanced Materials. 27 [1] (2026) 2726186 10.1080/14686996.2026.2726186 Open Access
  4. Takayoshi Oshima. Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing. Japanese Journal of Applied Physics. 65 [17] (2026) 178001 10.35848/1347-4065/aea1b2 Open Access
  5. Takayoshi Oshima, Yuichi Oshima. (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates. Japanese Journal of Applied Physics. 65 [13] (2026) 138001 10.35848/1347-4065/ae83f5 Open Access
  6. Yuichi Oshima, Takayoshi Oshima, Shiyu Xiao, Kazuto Murakami, Katsuhiro Imai, Takahiro Tomita. Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template. Journal of Applied Physics. 139 [7] (2026) 075302 10.1063/5.0319104 Open Access
  7. Takayoshi Oshima. Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice. Japanese Journal of Applied Physics. 65 [3] (2026) 038003 10.35848/1347-4065/ae42ac Open Access
  8. Takayoshi Oshima. Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles. AIP Advances. 16 [2] (2026) 025145 10.1063/5.0305647 Open Access
2025
  1. Takayoshi Oshima, Yuichi Oshima. Fabrication of β-Ga 2 O 3 /air-gap structures on (001) β-Ga 2 O 3 using HCl gas etching. Science and Technology of Advanced Materials: Methods. 5 [1] (2025) 2554046 10.1080/27660400.2025.2554046 Open Access
  2. Yuichi Oshima, Takayoshi Oshima. Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy. Science and Technology of Advanced Materials. 26 [1] (2025) 2585551 10.1080/14686996.2025.2585551 Open Access
  3. Yuichi Oshima, Takayoshi Oshima. HCl-gas etching behavior of (001) β-Ga 2 O 3 under oxygen supply. Science and Technology of Advanced Materials. 26 [1] (2025) 2546285 10.1080/14686996.2025.2546285 Open Access
  4. Takayoshi Oshima. Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH). Applied Physics Express. 18 [11] (2025) 116501 10.35848/1882-0786/ae1e59 Open Access
  5. Takayoshi Oshima. Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer. Japanese Journal of Applied Physics. 64 [8] (2025) 088001 10.35848/1347-4065/adf380 Open Access
  6. Takayoshi Oshima, Yuichi Oshima. Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching. AIP Advances. 15 [5] (2025) 055207 10.1063/5.0260753 Open Access
  7. Takayoshi Oshima, Yuichi Oshima. Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3. Japanese Journal of Applied Physics. 64 [1] (2025) 018003 10.35848/1347-4065/ada706 Open Access
2024
  1. Takayoshi Oshima, Rie Togashi, Yuichi Oshima. Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure. Science and Technology of Advanced Materials. 25 [1] (2024) 2378683 10.1080/14686996.2024.2378683 Open Access
  2. Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 17 [8] (2024) 086501 10.35848/1882-0786/ad64ba Open Access
  3. Takayoshi Oshima, Yuichi Oshima. Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches. Applied Physics Letters. 124 [4] (2024) 042110 10.1063/5.0186319 Open Access
  4. Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, Katsuhisa Tanaka. Rutile-type Ge x Sn1−x O2 alloy layers lattice-matched to TiO2 substrates for device applications. Applied Physics Express. 17 [1] (2024) 011008 10.35848/1882-0786/ad15f3 Open Access
2023
  1. Takayoshi Oshima, Shinji Nakagomi. Epitaxial relationship of NiO on ( 1̅ 02) β-Ga2O3. Japanese Journal of Applied Physics. 62 [12] (2023) 128001 10.35848/1347-4065/ad0ac9 Open Access
  2. Yuichi Oshima, Takayoshi Oshima. Homoepitaxial growth of 1ˉ02  β-Ga2O3 by halide vapor phase epitaxy. Semiconductor Science and Technology. 38 [10] (2023) 105003 10.1088/1361-6641/acf241 Open Access
  3. Yuichi Oshima, Takayoshi Oshima. Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3. Japanese Journal of Applied Physics. 62 [8] (2023) 080901 10.35848/1347-4065/acee3b Open Access
  4. Takayoshi Oshima, Yuichi Oshima. Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate. Applied Physics Express. 16 [6] (2023) 066501 10.35848/1882-0786/acdbb7 Open Access
  5. Takayoshi Oshima, Yuichi Oshima. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas. Applied Physics Letters. 122 [16] (2023) 162102 10.1063/5.0138736 Open Access
  6. Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, Kentaro Kaneko. Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate. Applied Physics Express. 16 [4] (2023) 045503 10.35848/1882-0786/acc82b Open Access
  7. Takayoshi Oshima. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography. Japanese Journal of Applied Physics. 62 [1] (2023) 018004 10.35848/1347-4065/acb0b3 Open Access
2022
  1. Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz. Tackling Disorder in γ‐Ga2O3. Advanced Materials. 34 [37] (2022) 10.1002/adma.202204217 Open Access
  2. Takayoshi Oshima, Yuichi Oshima. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy. Applied Physics Express. 15 [7] (2022) 075503 10.35848/1882-0786/ac75c8 Open Access
2020
  1. Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. In-plane anisotropy in the direction of the dislocation bending in α-Ga2O3 grown by epitaxial lateral overgrowth. Applied Physics Express. 13 [11] (2020) 115502 10.35848/1882-0786/abbfe2
  2. Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Takashi Shinohe. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism. Japanese Journal of Applied Physics. 59 [11] (2020) 115501 10.35848/1347-4065/abbc57 Open Access
  3. Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties. Semiconductor Science and Technology. 35 [5] (2020) 055022 10.1088/1361-6641/ab7843 Open Access
  4. Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. Japanese Journal of Applied Physics. 59 [2] (2020) 025512 10.35848/1347-4065/ab6faf Open Access
2019
  1. Toshiyuki Oishi, Kosuke Urata, Makoto Hashikawa, Kosuke Ajiro, Takayoshi Oshima. Microwave Power Rectification Using $\beta$ -Ga2O3 Schottky Barrier Diodes. IEEE Electron Device Letters. 40 [9] (2019) 1393-1395 10.1109/led.2019.2931793
  2. Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi, Takayoshi Oshima. Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates. Applied Physics Express. 12 [6] (2019) 065503 10.7567/1882-0786/ab2196 Open Access
  3. Takayoshi Oshima, Yuji Kato, Eisuke Magome, Eiichi Kobayashi, Kazutoshi Takahashi. Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface. Japanese Journal of Applied Physics. 58 [6] (2019) 060910 10.7567/1347-4065/ab219f
  4. Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios. Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010). Japanese Journal of Applied Physics. 58 [SB] (2019) SBBD12 10.7567/1347-4065/ab002b
2018
  1. Takayoshi Oshima, Makoto Hashikawa, Sansei Tomizawa, Kazuho Miki, Toshiyuki Oishi, Kohei Sasaki, Akito Kuramata. β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide. Applied Physics Express. 11 [11] (2018) 112202 10.7567/apex.11.112202
  2. Takayoshi Oshima, Yuji Kato, Eiichi Kobayashi, Kazutoshi Takahashi. Measurements of the band alignment at coherent α-Ga2O3/Al2O3 heterojunctions. Japanese Journal of Applied Physics. 57 [8] (2018) 080308 10.7567/jjap.57.080308
  3. Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi. α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire. Applied Physics Express. 11 [6] (2018) 065501 10.7567/apex.11.065501 Open Access
2017
  1. M. M. Maitani, K. Tanaka, H. Satou, T. Oshima, A. Ohtomo, Y. Wada. Hetero-epitaxial growth control of single-crystalline anatase TiO2 nanosheets predominantly exposing the {001} facet on oriented crystalline substrates. CrystEngComm. 19 [32] (2017) 4734-4741 10.1039/c7ce00754j
  2. Makoto Kasu, Takayoshi Oshima, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3. Japanese Journal of Applied Physics. 56 [9] (2017) 091101 10.7567/jjap.56.091101
  3. Takayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda, Toshiyuki Oishi, Makoto Kasu. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects. Japanese Journal of Applied Physics. 56 [8] (2017) 086501 10.7567/jjap.56.086501
  4. Takayoshi Oshima, Yuji Kato, Masaya Oda, Toshimi Hitora, Makoto Kasu. Epitaxial growth of γ-(AlxGa1−x)O3alloy films for band-gap engineering. Applied Physics Express. 10 [5] (2017) 051104 10.7567/apex.10.051104
  5. Satoshi Masuya, Kenji Hanada, Takayoshi Oshima, Hitoshi Sumiya, Makoto Kasu. Formation of stacking fault and dislocation behavior during the high-temperature annealing of single-crystal HPHT diamond. Diamond and Related Materials. 75 (2017) 155-160 10.1016/j.diamond.2017.04.003
  6. Masato M. Maitani, Takuya Yamada, Hisanori Mashiko, Kohei Yoshimatsu, Takayoshi Oshima, Akira Ohtomo, Yuji Wada. Microwave Effects on Co–Pi Cocatalysts Deposited on α-Fe2O3 for Application to Photocatalytic Oxygen Evolution. ACS Applied Materials & Interfaces. 9 [12] (2017) 10349-10354 10.1021/acsami.6b16319
  7. Takayoshi Oshima, Yuji Kato, Naoto Kawano, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Toshiyuki Oishi, Makoto Kasu. Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface. Applied Physics Express. 10 [3] (2017) 035701 10.7567/apex.10.035701
2016
  1. Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, Makoto Kasu. Formation of indium–tin oxide ohmic contacts for β-Ga2O3. Japanese Journal of Applied Physics. 55 [12] (2016) 1202B7 10.7567/jjap.55.1202b7
  2. Makoto Kasu, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Takayoshi Oshima, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda. Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes. Japanese Journal of Applied Physics. 55 [12] (2016) 1202BB 10.7567/jjap.55.1202bb
  3. Mai Hattori, Takayoshi Oshima, Ryo Wakabayashi, Kohei Yoshimatsu, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates. Japanese Journal of Applied Physics. 55 [12] (2016) 1202B6 10.7567/jjap.55.1202b6
  4. K. Yoshimatsu, H. Okabe, T. Oshima, S. Ueda, A. Ohtomo. Strain-induced metal-insulator transition int2gelectron system of perovskite titanateSm0.5Ca0.5TiO3films. Physical Review B. 93 [19] (2016) 195159 10.1103/physrevb.93.195159
  5. H. Mashiko, K. Yoshimatsu, T. Oshima, A. Ohtomo. Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe2O3 Thin Films. The Journal of Physical Chemistry C. 120 [5] (2016) 2747-2752 10.1021/acs.jpcc.5b10838
2015
  1. K. Yoshimatsu, M. Niwa, H. Mashiko, T. Oshima, A. Ohtomo. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction. Scientific Reports. 5 [1] (2015) 16325 10.1038/srep16325 Open Access
  2. Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo. Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(Al Ga1−)2O3 films. Journal of Crystal Growth. 424 (2015) 77-79 10.1016/j.jcrysgro.2015.05.005
  3. Takayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, Akira Ohtomo. Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition. Journal of Crystal Growth. 421 (2015) 23-26 10.1016/j.jcrysgro.2015.04.011
  4. Takayoshi Oshima, Kosuke Yokoyama, Mifuyu Niwa, Akira Ohtomo. Pulsed-laser deposition of superconducting LiTi 2 O 4 ultrathin films. Journal of Crystal Growth. 419 (2015) 153-157 10.1016/j.jcrysgro.2015.03.029
  5. Kohei Yoshimatsu, Takayuki Suzuki, Nobuo Tsuchimine, Koji Horiba, Hiroshi Kumigashira, Takayoshi Oshima, Akira Ohtomo. Direct growth of metallic TiH2thin films by pulsed laser deposition. Applied Physics Express. 8 [3] (2015) 035801 10.7567/apex.8.035801
  6. K. Yoshimatsu, K. Nogami, K. Watarai, K. Horiba, H. Kumigashira, O. Sakata, T. Oshima, A. Ohtomo. Synthesis and magnetic properties of double-perovskite oxideLa2MnFeO6thin films. Physical Review B. 91 [5] (2015) 054421 10.1103/physrevb.91.054421
2014
  1. Takayoshi Oshima, Mifuyu Niwa, Akira Mukai, Tomohito Nagami, Toshihisa Suyama, Akira Ohtomo. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition. Journal of Crystal Growth. 386 (2014) 190-193 10.1016/j.jcrysgro.2013.10.012
2013
  1. Takayoshi Oshima, Kenichi Kaminaga, Hisanori Mashiko, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Akira Ohtomo. β-Ga2O3Single Crystal as a Photoelectrode for Water Splitting. Japanese Journal of Applied Physics. 52 [11R] (2013) 111102 10.7567/jjap.52.111102
  2. Kengo Nogami, Kohei Yoshimatsu, Hisanori Mashiko, Enju Sakai, Hiroshi Kumigashira, Osami Sakata, Takayoshi Oshima, Akira Ohtomo. Epitaxial Synthesis and Electronic Properties of Double-Perovskite Sr2TiRuO6Films. Applied Physics Express. 6 [10] (2013) 105502 10.7567/apex.6.105502
  3. Takayoshi Oshima, Kenichi Kaminaga, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Akira Ohtomo. Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3Single Crystals by Thermal Oxidation. Japanese Journal of Applied Physics. 52 [5R] (2013) 051101 10.7567/jjap.52.051101
  4. Akira Ohtomo, Suvankar Chakraverty, Hisanori Mashiko, Takayoshi Oshima, Masashi Kawasaki. Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskites. Journal of Materials Research. 28 [5] (2013) 689-695 10.1557/jmr.2012.438
2012
  1. Hisanori Mashiko, Takayoshi Oshima, Akira Ohtomo. Epitaxial Structures of Band-Gap-Engineered $\alpha$-(Cr$_{x}$Fe$_{1-x}$)$_{2}$O$_{3}$ ($0 \leq x\leq 1$) Films Grown on $C$-Plane Sapphire. Japanese Journal of Applied Physics. 51 (2012) 11PG11 10.1143/jjap.51.11pg11
  2. Takayoshi Oshima, Taishi Nakazono, Akira Mukai, Akira Ohtomo. Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition. Journal of Crystal Growth. 359 (2012) 60-63 10.1016/j.jcrysgro.2012.08.025
2011
  1. Hisanori Mashiko, Takayoshi Oshima, Akira Ohtomo. Band-gap narrowing in α-(CrxFe1-x)2O3 solid-solution films. Applied Physics Letters. 99 [24] (2011) 241904 10.1063/1.3669704
  2. Takeya Okuno, Takayoshi Oshima, Sam-Dong Lee, Shizuo Fujita. Growth of SnO2 crystalline thin films by mist chemical vapour deposition method. physica status solidi (c). 8 [2] (2011) 540-542 10.1002/pssc.201000619
2009
  1. Takayoshi Oshima, Takeya Okuno, Shizuo Fujita. UV-B Sensor Based on a SnO2Thin Film. Japanese Journal of Applied Physics. 48 [12] (2009) 120207 10.1143/jjap.48.120207
  2. Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 48 [7] (2009) 070202 10.1143/jjap.48.070202
  3. Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. Wet Etching of β-Ga2O3Substrates. Japanese Journal of Applied Physics. 48 [4] (2009) 040208 10.1143/jjap.48.040208
  4. Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Harumichi Hino, Shizuo Fujita. Flame Detection by a β-Ga2O3-Based Sensor. Japanese Journal of Applied Physics. 48 [1] (2009) 011605 10.1143/jjap.48.011605
2008
  1. Shigeo Ohira, Naoki Arai, Takayoshi Oshima, Shizuo Fujita. Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth. Applied Surface Science. 254 [23] (2008) 7838-7842 10.1016/j.apsusc.2008.02.184
  2. Takayoshi Oshima, Shizuo Fujita. Properties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxy. physica status solidi (c). 5 [9] (2008) 3113-3115 10.1002/pssc.200779297
  3. Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy. Thin Solid Films. 516 [17] (2008) 5768-5771 10.1016/j.tsf.2007.10.045
  4. Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates. Applied Physics Express. 1 [1] (2008) 011202 10.1143/apex.1.011202
2007
  1. Takayoshi Oshima, Takeya Okuno, Shizuo Fujita. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors. Japanese Journal of Applied Physics. 46 [11] (2007) 7217-7220 10.1143/jjap.46.7217
  2. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, B. H. Zhao. Carrier concentration dependence of band gap shift in n-type ZnO:Al films. Journal of Applied Physics. 101 [8] (2007) 083705 10.1063/1.2721374
  3. J.G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, S. Fujita. Zno-based thin films synthesized by atmospheric pressure mist chemical vapor deposition. Journal of Crystal Growth. 299 [1] (2007) 1-10 10.1016/j.jcrysgro.2006.10.251
2006
  1. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima. Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin films. Applied Physics Letters. 89 [26] (2006) 10.1063/1.2424308
  2. Takayoshi Oshima, Shizuo Fujita. (111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 45 [11] (2006) 8653-8655 10.1143/jjap.45.8653

書籍 TSV

2020
  1. Takayoshi Oshima. Photodetectors. Gallium Oxide. Springer International Publishing, 2020 10.1007/978-3-030-37153-1_38

会議録 TSV

口頭発表 TSV

2026
  1. OSHIMA, Takayoshi. Pseudo-cubic representation of the monoclinic β-Ga2O3 structure and its applications for exploring substrate orientations. Transparent Conductive Oxides - Fundamentals and Applications (TCO 2026). 2026 招待講演
  2. Kazuyoshi Norimatsu, OSHIMA, Takayoshi, Yuri Shimizu, Ai Kono, Shinpei Matsuda. Depletion-mode r-GeO2 MOSFETs Fabricated by Selective Area Growth via Atmospheric Pressure Chemical Vapor Deposition with Ultrasonic Transducers. 2026 International Conference on Solid State Devices and Materials (SSDM2026). 2026
  3. 大島 孝仁, 大島 祐一. (−102), (512)面β 型酸化ガリウム基板のTMAHウェットエッチング特性. 2026年 第87回応用物理学会秋季学術講演会. 2026
  4. 池之上 卓己, 余野 正樹, 大島 孝仁, 三宅 正男, 土井 俊哉. 疑似立方晶格子によるβ-Ga2O3上NiO薄膜のエピタキシャル関係の理解. 2026年 第87回応用物理学会秋季学術講演会. 2026
  5. 余野 正樹, 池之上 卓己, 大島 孝仁, 土井 俊哉. ミストCVD法によるβ-Ga2O3 (011) 基板上NiOエピタキシャル成長. 2026年 第87回応用物理学会秋季学術講演会. 2026
  6. 井村 将隆, 廣戸 孝信, 大島 孝仁, 間野 高明, ザオ ウェン, 廖 梅勇, 糸数 雄吏, 定 昌史, 森 建紀, Zhang Ya. 格子整合AlxIn1–xN犠牲層を用いたサファイア基板上GaN MEMS共振子の作製と高Q動作. 2026年 第87回応用物理学会秋季学術講演会. 2026
  7. 神野 莉衣奈, 肖 世玉, 大島 孝仁, 岩本 敏, 村上 和仁, 今井 克宏, 冨田 崇弘. ミストCVD法によるα-Cr2O3テンプレート上のα-(Al,Ga)2O3薄膜の成長. 2026年 第87回応用物理学会秋季学術講演会. 2026
  8. 大島 祐一, 大島 孝仁, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. c面α-(Cr0.8Fe0.2)2O3テンプレート上のα-Ga2O3のハライド気相成長. 2026年第87回応用物理学会秋季学術講演会. 2026
  9. 大島 祐一, 大島 孝仁, 林 家弘, 佐々木 公平. (001) β-Ga2O3のHVPEによる高濃度n型ドーピング. 第87回応用物理学会秋季学術講演会. 2026
  10. 大島 孝仁, 大島 祐一. β型酸化ガリウム(011)面基板上ハライド気相成長膜の表面形状. 2026年 第87回応用物理学会秋季学術講演会. 2026
  11. 大島 孝仁, 大島 祐一. β型酸化ガリウム半導体用Ti/Pt/Auオーミック電極. 2026年 第87回応用物理学会秋季学術講演会. 2026
  12. Riena Jinno, Shiyu Xiao, OSHIMA, Takayoshi, Satoshi Iwamoto, Katsuhiro Imai, Takahiro Tomita. Coherent growth of α-(Al,Ga)2O3 on α-Cr2O3 templates by mist CVD. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026
  13. OSHIMA, Yuichi, OSHIMA, Takayoshi, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. Structural and electrical properties of c-plane α-Ga2O3 grown on high-quality α-Cr2O3 templates by HVPE. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026
  14. OSHIMA, Yuichi, OSHIMA, Takayoshi. Identification of facets formed on (011) β-Ga2O3 homoepitaxial layers. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026
  15. OSHIMA, Takayoshi, OSHIMA, Yuichi. HCl-based halide vapor phase epitaxy and HCl gas etching on (-112) β-Ga2O3 substrates. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026
  16. OSHIMA, Takayoshi. Anisotropic wet etching of β-Ga2O3 using TMAH. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026
  17. OSHIMA, Takayoshi. Pseudo-cubic representation of the monoclinic β-Ga2O3 structure. Compound Semiconductor Week 2026 (CSW2026). 2026
  18. OSHIMA, Takayoshi. V-shaped grooves formed on (−102) β-Ga2O3 using TMAH wet etching. Compound Semiconductor Week 2026 (CSW2026). 2026
  19. 大島 孝仁. 酸素格子から考えたβ型酸化ガリウムの主要な結晶面方位. 2026年 第73回応用物理学会春季学術講演会. 2026
  20. 大島 祐一, 大島 孝仁. HCl-HVPEによる(011) β-Ga2O3の高速ホモエピ成長. 2026年 第73回応用物理学会春季学術講演会. 2026
  21. 大島 祐一, 大島 孝仁, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. c面α-Cr2O3テンプレート上のα-Ga2O3のハライド気相成長. 2026年 第73回応用物理学会春季学術講演会. 2026
  22. 大島 孝仁. (010)面β-Ga2O3上におけるTMAHを用いた結晶異方性ウェットエッチング. 2026年 第73回応用物理学会春季学術講演会. 2026
  23. 松田 慎平, 清水 悠吏, 大島 孝仁, 河野 愛, 衣斐 豊祐. コンダクタンス法によるr-GeO2 SBD ショットキー界面特性の評価と解析. 2026年 第73回応用物理学会春季学術講演会. 2026
  24. 大島 孝仁, 大島 祐一. (011)近傍面方位β-Ga2O3上のHCl系ハライド気相成長とHClガスエッチング. 2026年 第73回応用物理学会春季学術講演会. 2026
  25. OSHIMA, Takayoshi. Crystallographic anisotropic etching of β-Ga2O3. ISPlasma 2026 (18th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials). 2026 招待講演
2025
  1. OSHIMA, Takayoshi. Novel crystallographic etching of β-Ga2O3. IMFEDK 2025 (The 2025 International Meeting for Future of Electron Devices, Kansai). 2025 招待講演
  2. N. Pholsen, J. Jeon, H. Otsuki, OSHIMA, Takayoshi, R. Jinno, S. Iwamoto. Fabrication of (100) Thin Film β-Ga2O3 on Insulator towards Optical Applications. 第86回応用物理学会 秋季学術講演会. 2025
  3. 大島 祐一, 大島 孝仁. O2供給下における(001) β-Ga2O3のHClガスエッチング. 第86回応用物理学会秋季学術講演会. 2025
  4. 大島 孝仁. 2.38 wt%TMAH現像液エッチングによる(001)面β-Ga2O3のステップ＆テラス表面形成. 第86回応用物理学会 秋季学術講演会. 2025
  5. 大島 孝仁, 大島 祐一. (001)面β-Ga2O3 基板上のβ-Ga2O3/エアギャップ構造作製. 第86回応用物理学会 秋季学術講演会. 2025
  6. OSHIMA, Takayoshi, OSHIMA, Yuichi. Crystallographic HCl gas etching for fabrication of β-Ga2O3/air-gap structures on (100) substrates. The 8th U.S. Workshop on Gallium Oxide. 2025
  7. OSHIMA, Takayoshi, OSHIMA, Yuichi. Near-vertical non-plasma HCl gas etching on (011) β-Ga2O3. The 8th U.S. Gallium Oxide Workshop (GOX 2025). 2025
  8. 大島 孝仁, 大島 祐一. 結晶異方性ガスエッチングによる(100) β-Ga2O3上のエアブリッジ作製. 2025年 第72回応用物理学会春季学術講演会. 2025
  9. 大島 孝仁, 大島 祐一. (011)面β-Ga2O3上のHCl ガスエッチング特性. 2025年 第72回応用物理学会春季学術講演会. 2025
  10. 清水悠吏, 大島 孝仁, 衣斐豊祐, 髙橋勲, 金子健太郎. ルチル構造二酸化ゲルマニウム(r-GeO2)のショットキーバリアダイオード特性. 2025年 第72回応用物理学会春季学術講演会. 2025
2024
  1. 大島 孝仁, 大島 祐一, 中込 真二. (-102)β-Ga2O3基板上のホモ・ヘテロエピタキシとプラズマフリー微細加工. 第53回結晶成長国内会議（JCCG-53）. 2024 招待講演
  2. IMURA, Masataka, OSHIMA, Takayoshi, OSHIMA, Yuichi. Fabrication of reverse tapered GaN edge structures for positive beveled edge termination. International Workshop on Nitride Semiconductors (IWN2024). 2024
  3. 大島 孝仁, 井村 将隆, 大島 祐一. 格子整合AlInN上GaNの逆テーパー型メサ形成の検討. 第85回応用物理学会秋季学術講演会. 2024
  4. 大島 孝仁. プラズマを用いない酸化ガリウムの微細加工方法. 新技術説明会. 2024
  5. TAKANE, Hitoshi, OSHIMA, Takayoshi, HARADA, Takayuki, KANEKO, Kentaro, TANAKA, Katsuhisa. Lattice-matching epitaxy of rutile-type GexSn1−xO2 alloy films on TiO2 substrates for device applications. Compound Semiconductor Week 2024. 2024
  6. OSHIMA, Takayoshi, TOGASHI Rie, OSHIMA, Yuichi. N2-diluted H2 gas etching of (-102) β-Ga2O3 under atmospheric pressure. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024
  7. JINNO Riena, OSHIMA, Takayoshi, OSHIMA, Yuichi, FUKATSU Susumu. Growth of α-(Al,Ga)2O3 films lattice-matched to α-Cr2O3 by mist-CVD. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024
  8. OSHIMA, Takayoshi, OSHIMA, Yuichi, Shinji Nakagomi. Structural characterization of homoepitaxial and NiO heteroepitaxial films, and selective-area-grown/-etched structures on (-102) β-Ga2O3 substrates. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024
  9. 大島 孝仁, 中込 真二. (-102)面β-Ga2O3基板上NiO膜のエピタキシャル構造. 2024年 第71回応用物理学会春季学術講演会. 2024
  10. 神野 莉衣奈, 大島 孝仁, 大島 祐一, 深津 晋. α-Cr2O3基板に格子整合したα-(Al,Ga)2O3の成長. 2024年 第71回応用物理学会春季学術講演会. 2024
  11. 大島 孝仁, 井村 将隆, 大島 祐一, 大石 敏之. GaN正ベベル終端形成のための選択成長結晶に対する逆テーパーエッチングの提案. 2024年 第71回応用物理学会春季学術講演会. 2024
  12. 大島 孝仁, 富樫 理恵, 大島 祐一. (-102) β-Ga2O3への大気圧下での窒素希釈水素ガスエッチング. 2024年 第71回応用物理学会春季学術講演会. 2024
  13. 大島 孝仁, 大島 祐一. ファセット形成を利用したβ-Ga2O3の微細加工. 第15回研究会「ワイドギャップパワー半導体：β-Ga2O3とダイヤモンド」. 2024 招待講演
2023
  1. 大島 祐一, 大島 孝仁. (001) β-Ga2O3基板に対するHClガスエッチングの温度とHCl分圧依存性. 第84回応用物理学会 秋季学術講演会. 2023
  2. 高根 倫史, 大島 孝仁, 田中 勝久, 金子 健太郎. r-GexSn1–xO2の成長機構とコヒーレント薄膜の作製. 第84回応用物理学会 秋季学術講演会. 2023 招待講演
  3. 大島 孝仁, 大島 祐一. (−102)面β-Ga2O3基板に対する選択成長と選択エッチング. 第84回応用物理学会 秋季学術講演会. 2023
  4. 大島 祐一, 大島 孝仁. (-102 )面β-Ga2O3基板上のホモエピタキシャル成長. 第84回応用物理学会 秋季学術講演会. 2023
  5. TAKANE, Hitoshi, OSHIMA, Takayoshi, TANAKA, Katsuhisa, KANEKO, Kentaro. Selective area growth of r-SnO2 on r-TiO2 (110) substrate. Compound Semiconductor Week 2023. 2023
  6. OSHIMA, Takayoshi, OSHIMA, Yuichi. HCl gas etching of (010) and (001) β-Ga2O3 substrates for the fabrication of plasma-damage-free trenches and fins. Compound Semiconductor Week 2023. 2023
  7. 大島 孝仁, 大島 祐一. (010)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023
  8. 高根 倫史, 大島 孝仁, 田中 勝久, 金子 健太郎. TiO2 (110)基板上のルチル型SnO2の選択成長. 2023年 第70回応用物理学会春季学術講演会. 2023
  9. 大島 孝仁, 大島 祐一. (001)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023
  10. 高根 倫史, 大島 孝仁, 田中 勝久, 金子 健太郎. TiO2基板上に選択成長したルチル型SnO2の成長ダイナミクス. 2023年日本セラミックス協会年会. 2023
  11. 大島 孝仁, 大島 祐一. β型酸化ガリウム半導体の選択成長. SATテクノロジー・ショーケース2023. 2023
2022
  1. OSHIMA, Takayoshi, OSHIMA, Yuichi. Selective-area-grown high-aspect-ratio β-Ga2O3 structures fabricated by HCl-based halide vapor phase epitaxy. The 4th International Workshop on Gallium Oxide and Related Materials. 2022
  2. OSHIMA, Takayoshi. Self-aligned photolithography using backside exposure through metal patterns on β-Ga2O3 substrates. The 4th International Workshop on Gallium Oxide and Related Materials. 2022
  3. 大島 孝仁, 大島 祐一. HCl支援ハライド気相成長法を用いたβ-Ga2O3の選択成長. 2022年 第83回応用物理学会秋季学術講演会. 2022
  4. 大島 孝仁. β-Ga2O3基板上の金属パターンをマスクとした裏面露光リソグラフィ. 2022年 第83回応用物理学会秋季学術講演会. 2022

その他の文献 TSV

2024
  1. 大島孝仁. 結晶の異方性を利用した酸化ガリウム半導体の微細加工技術. 車載テクノロジー. 12 [2] (2024) 68-72 Open Access

公開特許出願 TSV

  1. 半導体装置およびその製造方法 (2025)
  2. 半導体装置及びシステム (2025)
  3. 結晶、半導体装置及びシステム (2025)
  4. 結晶、半導体装置及びシステム (2025)
  5. 半導体装置およびその製造方法 (2024)
  6. 半導体装置、その用途、およびその製造方法 (2023)

▲ページトップへ移動