[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [特許]
論文 TSV
2023
- Takayoshi Oshima, Yuichi Oshima. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas. Applied Physics Letters. 122 [16] (2023) 162102 10.1063/5.0138736
- Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, Kentaro Kaneko. Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate. Applied Physics Express. 16 [4] (2023) 045503 10.35848/1882-0786/acc82b
- Takayoshi Oshima. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography. Japanese Journal of Applied Physics. 62 [1] (2023) 018004 10.35848/1347-4065/acb0b3
2022
- Takayoshi Oshima, Yuichi Oshima. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy. Applied Physics Express. 15 [7] (2022) 075503 10.35848/1882-0786/ac75c8
2020
- Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Takashi Shinohe. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism. Japanese Journal of Applied Physics. 59 [11] (2020) 115501 10.35848/1347-4065/abbc57
- Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties. Semiconductor Science and Technology. 35 [5] (2020) 055022 10.1088/1361-6641/ab7843
- Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. Japanese Journal of Applied Physics. 59 [2] (2020) 025512 10.35848/1347-4065/ab6faf
2019
- Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi, Takayoshi Oshima. Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates. Applied Physics Express. 12 [6] (2019) 065503 10.7567/1882-0786/ab2196
2018
- Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi. α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire. Applied Physics Express. 11 [6] (2018) 065501 10.7567/apex.11.065501
2016
- K. Yoshimatsu, H. Okabe, T. Oshima, S. Ueda, A. Ohtomo. Strain-induced metal-insulator transition int2gelectron system of perovskite titanateSm0.5Ca0.5TiO3films. Physical Review B. 93 [19] (2016) 195159 10.1103/physrevb.93.195159
2015
- K. Yoshimatsu, K. Nogami, K. Watarai, K. Horiba, H. Kumigashira, O. Sakata, T. Oshima, A. Ohtomo. Synthesis and magnetic properties of double-perovskite oxideLa2MnFeO6thin films. Physical Review B. 91 [5] (2015) 054421 10.1103/physrevb.91.054421
書籍 TSV
会議録 TSV
口頭発表 TSV
2023
- 大島 孝仁, 大島 祐一. (001)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023
- 高根 倫史, 大島 孝仁, 田中 勝久, 金子 健太郎. TiO2 (110)基板上のルチル型SnO2の選択成長. 2023年 第70回応用物理学会春季学術講演会. 2023
- 大島 孝仁, 大島 祐一. (010)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023
- 高根 倫史, 大島 孝仁, 田中 勝久, 金子 健太郎. TiO2基板上に選択成長したルチル型SnO2の成長ダイナミクス. 2023年日本セラミックス協会年会. 2023
- 大島 孝仁, 大島 祐一. β型酸化ガリウム半導体の選択成長. SATテクノロジー・ショーケース2023. 2023
2022
- OSHIMA, Takayoshi. Self-aligned photolithography using backside exposure through metal patterns on β-Ga2O3 substrates. The 4th International Workshop on Gallium Oxide and Related Materials. 2022
- OSHIMA, Takayoshi, OSHIMA, Yuichi. Selective-area-grown high-aspect-ratio β-Ga2O3 structures fabricated by HCl-based halide vapor phase epitaxy. The 4th International Workshop on Gallium Oxide and Related Materials. 2022
- 大島 孝仁, 大島 祐一. HCl支援ハライド気相成長法を用いたβ-Ga2O3の選択成長. 2022年 第83回応用物理学会秋季学術講演会. 2022
- 大島 孝仁. β-Ga2O3基板上の金属パターンをマスクとした裏面露光リソグラフィ. 2022年 第83回応用物理学会秋季学術講演会. 2022