Epitaxial Structures of Band-Gap-Engineered $\alpha$-(Cr$_{x}$Fe$_{1-x}$)$_{2}$O$_{3}$ ($0 \leq x\leq 1$) Films Grown on $C$-Plane Sapphire | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Epitaxial Structures of Band-Gap-Engineered $\alpha$-(Cr$_{x}$Fe$_{1-x}$)$_{2}$O$_{3}$ ($0 \leq x\leq 1$) Films Grown on $C$-Plane Sapphire

Hisanori Mashiko, Takayoshi Oshima, Akira Ohtomo.

Japanese Journal of Applied Physics 51 11PG11. 2012.

https://doi.org/10.1143/jjap.51.11pg11

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大島孝仁

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作成時刻: 2021-11-12 11:25:40 +0900 更新時刻: 2026-10-08 04:35:28 +0900

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