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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

著者Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe.
掲載誌名Semiconductor Science and Technology 35 [5] 055022
ISSN: 02681242, 13616641, 09532048, 13616668
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2020
言語unknown
DOIhttps://doi.org/10.1088/1361-6641/ab7843
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