HOME > 論文 > 書誌詳細Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal propertiesYuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Semiconductor Science and Technology 35 [5] 055022. 2020.https://doi.org/10.1088/1361-6641/ab7843 Open Access Materials Data Repository (MDR) NIMS著者大島 祐一大島 孝仁Materials Data Repository (MDR)上の本文・データセットMDRavailable Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties 作成時刻: 2020-04-07 03:00:20 +0900更新時刻: 2024-10-06 05:05:52 +0900
