Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties | SAMURAI, NIMS Researchers Directory Service

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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe.

Semiconductor Science and Technology 35 [5] 055022. 2020.

https://doi.org/10.1088/1361-6641/ab7843

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Created at: 2020-04-07 03:00:20 +0900Updated at: 2024-03-31 00:31:01 +0900

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