| 21 article(s) found. Sorted by publication dates. (Help) | |
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| Yuichi Oshima, Takayoshi Oshima. Homoepitaxial growth of
1ˉ02
β-Ga2O3 by halide vapor phase epitaxy. Semiconductor Science and Technology. 38 [10] (2023) 105003 10.1088/1361-6641/acf241 Open Access | |
| Lihong Huang, Senping Fan, Liwen Sang, Yang Mei, Leiying Ying, Baoping Zhang, Hao Long. Thermal conductivity and phonon scattering of AlGaN nanofilms by elastic theory and Boltzmann transport equation. Semiconductor Science and Technology. 37 [5] (2022) 055003 10.1088/1361-6641/ac5293 | |
| Senping Fan, Tianyu Yan, Lihong Huang, Liwen Sang, Yang Mei, Leiying Ying, Baoping Zhang, Hao Long. Effect of stress on thermal properties of AlGaN nanofilms. Semiconductor Science and Technology. 37 [12] (2022) 125006 10.1088/1361-6641/ac9e18 | |
| Ting Huang, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari, Junming Liu. Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition. Semiconductor Science and Technology. 37 [2] (2022) 025005 10.1088/1361-6641/ac3e05 | |
| Sagar Bhandari, Mary Kreidel, Alexander Kelser, Gil-Ho Lee, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Robert M Westervelt. Imaging the flow of holes from a collimating contact in graphene. Semiconductor Science and Technology. 35 [9] (2020) 09LT02 10.1088/1361-6641/aba08d Open Access | |
| Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties. Semiconductor Science and Technology. 35 [5] (2020) 055022 10.1088/1361-6641/ab7843 Open Access | |
| Zhe (Ashley) Jian, Yuichi Oshima, Shawn Wright, Kevin Owen, Elaheh Ahmadi. Chlorine-based inductive coupled plasma etching of α-Ga2O3. Semiconductor Science and Technology. 34 [3] (2019) 035006 10.1088/1361-6641/aafeb2 | |
| Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi. Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing. Semiconductor Science and Technology. 34 [3] (2019) 034001 10.1088/1361-6641/aafdbd | |
| K Yamamoto, R Noguchi, M Mitsuhara, M Nishida, T Hara, D Wang, H Nakashima. Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition. Semiconductor Science and Technology. 33 [11] (2018) 114011 10.1088/1361-6641/aae4bd | |
| Sang-Heon Han, Akhil Mauze, Elaheh Ahmadi, Tom Mates, Yuichi Oshima, James S Speck. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy. Semiconductor Science and Technology. 33 [4] (2018) 045001 10.1088/1361-6641/aaae56 | |
