Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition

Ting Huang, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari, Junming Liu.

Semiconductor Science and Technology 37 [2] 025005. 2022.

https://doi.org/10.1088/1361-6641/ac3e05

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作成時刻: 2023-02-24 17:18:43 +0900更新時刻: 2024-08-10 08:38:54 +0900

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