HOME > Article > DetailInterface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer depositionTing Huang, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari, Junming Liu. Semiconductor Science and Technology 37 [2] 025005. 2022.https://doi.org/10.1088/1361-6641/ac3e05 NIMS author(s)MINARI, TakeoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-02-24 17:18:43 +0900Updated at: 2024-04-27 03:01:18 +0900