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Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition

Ting Huang, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari, Junming Liu.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2023-02-24 17:18:43 +0900Updated at: 2024-04-27 03:01:18 +0900

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