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Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

K Yamamoto, R Noguchi, M Mitsuhara, M Nishida, T Hara, D Wang, H Nakashima.

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Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2019-03-01 11:36:38 +0900更新時刻: 2024-05-03 06:21:24 +0900

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