Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

K Yamamoto, R Noguchi, M Mitsuhara, M Nishida, T Hara, D Wang, H Nakashima.

Semiconductor Science and Technology 33 [11] 114011. 2018.

https://doi.org/10.1088/1361-6641/aae4bd

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作成時刻: 2019-03-01 11:36:38 +0900更新時刻: 2024-04-02 01:47:44 +0900

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