HOME > 論文 > 書誌詳細n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxySang-Heon Han, Akhil Mauze, Elaheh Ahmadi, Tom Mates, Yuichi Oshima, James S Speck. Semiconductor Science and Technology 33 [4] 045001. 2018.https://doi.org/10.1088/1361-6641/aaae56 NIMS著者大島 祐一Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-03-07 21:07:13 +0900更新時刻: 2024-04-02 00:22:40 +0900
