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n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

著者Sang-Heon Han, Akhil Mauze, Elaheh Ahmadi, Tom Mates, Yuichi Oshima, James S Speck.
掲載誌名Semiconductor Science and Technology 33 [4] 045001
ISSN: 02681242, 13616641, 09532048, 13616668
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2018
言語English
DOIhttps://doi.org/10.1088/1361-6641/aab458
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