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n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

Sang-Heon Han, Akhil Mauze, Elaheh Ahmadi, Tom Mates, Yuichi Oshima, James S Speck.
Semiconductor Science and Technology 33 [4] 045001. 2018.
https://doi.org/10.1088/1361-6641/aaae56

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    Created at: 2018-03-07 21:07:13 +0900Updated at: 2024-05-03 04:56:04 +0900

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