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Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing

著者Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi.
掲載誌名Semiconductor Science and Technology 34 [3] 034001
ISSN: 02681242, 13616641, 09532048, 13616668
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2019
言語English
DOIhttps://doi.org/10.1088/1361-6641/aafdbd
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