Kazuya Yuge; Toshihide Nabatame; Yoshihiro Irokawa; Akihiko Ohi; Naoki Ikeda; Liwen Sang; Yasuo Koide; Tomoji Ohishi

doi:10.1088/1361-6641/aafdbd

Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing

著者	Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi.
掲載誌名	Semiconductor Science and Technology 34 [3] 034001 ISSN: 02681242, 13616641, 09532048, 13616668 ESIでのカテゴリ: PHYSICS
出版社	IOP Publishing
発表年	2019
言語	English
DOI	https://doi.org/10.1088/1361-6641/aafdbd
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