HOME > 論文 > 書誌詳細Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealingKazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi. Semiconductor Science and Technology 34 [3] 034001. 2019.https://doi.org/10.1088/1361-6641/aafdbd NIMS著者弓削 雅津也生田目 俊秀色川 芳宏大井 暁彦池田 直樹小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:46:07 +0900更新時刻: 2024-10-12 04:48:25 +0900
