HOME > Article > DetailCharacteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealingKazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi. Semiconductor Science and Technology 34 [3] 034001. 2019.https://doi.org/10.1088/1361-6641/aafdbd NIMS author(s)YUGE, KazuyaNABATAME, ToshihideIROKAWA, YoshihiroOHI, AkihikoIKEDA, NaokiSANG, LiwenKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2019-03-01 11:46:07 +0900 Updated at :2020-11-16 22:13:56 +0900