Homoepitaxial growth of 1ˉ02 β-Ga<sub>2</sub>O<sub>3</sub> by halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Homoepitaxial growth of 1ˉ02 β-Ga₂O₃ by halide vapor phase epitaxy

Yuichi Oshima, Takayoshi Oshima.

Semiconductor Science and Technology 38 [10] 105003. 2023.

https://doi.org/10.1088/1361-6641/acf241

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy

作成時刻: 2023-09-06 03:56:01 +0900 更新時刻: 2026-10-08 08:49:30 +0900

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