HOME > 論文 > 書誌詳細Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxyYuichi Oshima, Takayoshi Oshima. Semiconductor Science and Technology 38 [10] 105003. 2023.https://doi.org/10.1088/1361-6641/acf241 Open Access Materials Data Repository (MDR) NIMS著者大島 祐一大島 孝仁Materials Data Repository (MDR)上の本文・データセットMDRavailable Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy 作成時刻: 2023-09-06 03:56:01 +0900更新時刻: 2024-10-13 08:38:40 +0900
