Self-aligned patterning on β-Ga<sub>2</sub>O<sub>3</sub> substrates via backside-exposure photolithography | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Self-aligned patterning on β-Ga₂O₃ substrates via backside-exposure photolithography

Takayoshi Oshima.

Japanese Journal of Applied Physics 62 [1] 018004. 2023.

https://doi.org/10.35848/1347-4065/acb0b3

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS著者

大島孝仁

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

作成時刻: 2023-01-25 03:35:40 +0900 更新時刻: 2026-10-08 07:11:30 +0900

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