Step-and-terrace surface formation on (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Step-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

Takayoshi Oshima.

Japanese Journal of Applied Physics 64 [8] 088001. 2025.

https://doi.org/10.35848/1347-4065/adf380

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS著者

大島孝仁

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Step-and-terrace surface formation on (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

作成時刻: 2025-08-19 03:09:09 +0900 更新時刻: 2026-10-01 06:27:16 +0900

▲ページトップへ移動