HOME > Presentation > DetailFabrication of reverse tapered GaN edge structures for positive beveled edge terminationIMURA, Masataka, OSHIMA, Takayoshi, OSHIMA, Yuichi. International Workshop on Nitride Semiconductors (IWN2024). November 03, 2024-November 08, 2024.NIMS author(s)IMURA, MasatakaOSHIMA, TakayoshiOSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2024-11-27 17:36:58 +0900 Updated at: 2024-11-27 17:36:58 +0900