HOME > 論文 > 書誌詳細Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxyYuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe. Japanese Journal of Applied Physics 59 [2] 025512. 2020.https://doi.org/10.35848/1347-4065/ab6faf Open Access Materials Data Repository (MDR) NIMS著者大島 祐一大島 孝仁Materials Data Repository (MDR)上の本文・データセットMDRavailable Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy 作成時刻: 2020-02-13 03:00:18 +0900更新時刻: 2024-03-31 09:34:05 +0900
