Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes

Makoto Kasu; Kenji Hanada; Tomoya Moribayashi; Akihiro Hashiguchi; Takayoshi Oshima; Toshiyuki Oishi; Kimiyoshi Koshi; Kohei Sasaki; Akito Kuramata; Osamu Ueda; Makoto Kasu; Kenji Hanada; Tomoya Moribayashi; Akihiro Hashiguchi; Takayoshi Oshima; Toshiyuki Oishi; Kimiyoshi Koshi; Kohei Sasaki; Akito Kuramata; Osamu Ueda

doi:10.7567/jjap.55.1202bb

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Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes

Makoto Kasu, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Takayoshi Oshima, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda.

Japanese Journal of Applied Physics 55 [12] 1202BB. 2016.

https://doi.org/10.7567/jjap.55.1202bb

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作成時刻: 2021-11-12 11:25:16 +0900 更新時刻: 2026-10-07 05:21:52 +0900