Formation of indium–tin oxide ohmic contacts for β-Ga2O3

Takayoshi Oshima; Ryo Wakabayashi; Mai Hattori; Akihiro Hashiguchi; Naoto Kawano; Kohei Sasaki; Takekazu Masui; Akito Kuramata; Shigenobu Yamakoshi; Kohei Yoshimatsu; Akira Ohtomo; Toshiyuki Oishi; Makoto Kasu; Takayoshi Oshima; Ryo Wakabayashi; Mai Hattori; Akihiro Hashiguchi; Naoto Kawano; Kohei Sasaki; Takekazu Masui; Akito Kuramata; Shigenobu Yamakoshi; Kohei Yoshimatsu; Akira Ohtomo; Toshiyuki Oishi; Makoto Kasu

doi:10.7567/jjap.55.1202b7

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Formation of indium–tin oxide ohmic contacts for β-Ga2O3

Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, Makoto Kasu.

Japanese Journal of Applied Physics 55 [12] 1202B7. 2016.

https://doi.org/10.7567/jjap.55.1202b7

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大島孝仁

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-11-12 11:25:20 +0900 更新時刻: 2026-10-07 05:26:46 +0900