HOME > Article > DetailProperties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxyTakayoshi Oshima, Shizuo Fujita. physica status solidi (c) 5 [9] 3113-3115. 2008.https://doi.org/10.1002/pssc.200779297 NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-11-12 11:25:53 +0900 Updated at: 2026-10-30 06:15:15 +0900