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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年06月16日

    29件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Kojiro Mimura. Yb valence state in Yb 5 Rh 4 Ge 10. physica status solidi c. 14 [6] (2017) 1600164 10.1002/pssc.201600164
  • Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma, Hiroyuki Sakaki. Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs. physica status solidi (c). (2016) 10.1002/pssc.201600109
  • Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto, SEKIGUCHI, Takashi, JIPTNER, Karolin, PRAKASH, Ronit Roneel, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 12 [8] (2015) 1094-1098
  • Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Control of extended defects in cast multicrystalline silicon using polycrystalline template. physica status solidi (c). 12 [8] (2015) 1099-1102 10.1002/pssc.201400299
  • A. Chettah, H. Amekura, R. Baeker, H. Kucal, Y. Takeda, M. Matsuda, A. Iwase. The inelastic thermal spike model applied to metal/insulator interfaces. physica status solidi c. 12 [1-2] (2015) 102-106 10.1002/pssc.201400149
  • Naoki Fukata. Doping and characterization of impurity atoms in Si and Ge nanowires. physica status solidi c. 11 [2] (2014) 320-330 10.1002/pssc.201300106
  • Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto. Broadband emission centered at ∼1 µm with a Gaussian‐like spectrum by stacking In‐flushed QD layers. physica status solidi c. 10 [11] (2013) 1361-1364 10.1002/pssc.201300291
  • Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song‐Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Current on‐off operation of graphene transistor with dual gates and He ion irradiated channel. physica status solidi c. 10 [11] (2013) 1608-1611 10.1002/pssc.201300262
  • Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi. Evaluation of residual strain in directional solidified mono‐Si ingots. physica status solidi c. 10 [1] (2013) 141-145 10.1002/pssc.201200884
  • Jumpei Ueda, Takayuki Nakanishi, Yumiko Katayama, Setsuhisa Tanabe. Optical and optoelectronic analysis of persistent luminescence in Eu2+-Dy3+codoped SrAl2O4ceramic phosphor. physica status solidi (c). 9 [12] (2012) 2322-2325 10.1002/pssc.201200299
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