HOME > 論文 > 書誌詳細Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser depositionTakayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, Akira Ohtomo. Journal of Crystal Growth 421 23-26. 2015.https://doi.org/10.1016/j.jcrysgro.2015.04.011 NIMS著者大島 孝仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-11-12 11:25:26 +0900 更新時刻: 2026-08-06 04:34:47 +0900
