Selective area growth of β-Ga<sub>2</sub>O<sub>3</sub> by HCl-based halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Selective area growth of β-Ga₂O₃ by HCl-based halide vapor phase epitaxy

Takayoshi Oshima, Yuichi Oshima.

Applied Physics Express 15 [7] 075503. 2022.

https://doi.org/10.35848/1882-0786/ac75c8

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

作成時刻: 2022-06-18 03:13:53 +0900 更新時刻: 2025-12-28 05:08:09 +0900

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