HOME > Article > DetailSelective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxyTakayoshi Oshima, Yuichi Oshima. Applied Physics Express 15 [7] 075503. 2022.https://doi.org/10.35848/1882-0786/ac75c8 Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, TakayoshiOSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy Created at: 2022-06-18 03:13:53 +0900Updated at: 2024-04-02 05:18:37 +0900
