HOME > 論文 > 書誌詳細Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios. Japanese Journal of Applied Physics 58 [SB] SBBD12. 2019.https://doi.org/10.7567/1347-4065/ab002b NIMS著者大島 孝仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-11-12 11:25:00 +0900更新時刻: 2024-04-02 02:35:21 +0900
