HOME > Article > DetailDemonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios. Japanese Journal of Applied Physics 58 [SB] SBBD12. 2019.https://doi.org/10.7567/1347-4065/ab002b NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-11-12 11:25:00 +0900 Updated at: 2026-10-08 04:32:32 +0900
