(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown <i>β-</i> Ga <sub>2</sub> O <sub>3</sub> homoepitaxial layers on (011) substrates | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga ₂ O ₃ homoepitaxial layers on (011) substrates

Takayoshi Oshima, Yuichi Oshima.

Japanese Journal of Applied Physics 65 [13] 138001. 2026.

https://doi.org/10.35848/1347-4065/ae83f5

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown <i>β-</i> Ga <sub>2</sub> O <sub>3</sub> homoepitaxial layers on (011) substrates

作成時刻: 2026-07-10 03:06:08 +0900 更新時刻: 2026-08-12 04:32:29 +0900

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